1600V 30A TO247 Search Results

60EPS16

Abstract: P035H
Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate

T 4512 H diode

Abstract: diode T 4512 H diode rectifier p 600
Contextual Info: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.

p035h

Abstract: 60EPS16
Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate

Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate

Contextual Info: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.

10ets08s

Abstract: 40EPS12 diode datasheet bridge rectifier 200a 40eps12 10ETS16S 40eps08 60A bridge rectifier 60eps16 10ETS08 20ETS08
Contextual Info: SAFEIR Series 8-80A, 800-1600V Rectifier Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 IF AVG 8A 10A 10A 20A Voltage Grade D-Pak D2-Pak TO-220AC D2-Pak 800 8EWS08S 10ETS08S 10ETS08 20ETS08S 1.1V 1.1V 20A 30A 40A 60A 80A Package Style Half Bridge 1200

60EPS08

Abstract: 60EPS12 60EPS16
Contextual Info: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

8EWS125

Abstract: 30DPS08 3004 20ets16 0/8EWS125
Contextual Info: !rj'f6N An oN /»xa£crfiEi Diodes SAFE//? Series 8-80A, 800-1600V Rectifier Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 îF 8A AVG; Package Style 10A 10A 20A 20A ir % « 30A Half-Bridge TO-247 3p»ns 40A 60A 1» Voltage Grade D-Pak D2-Pak T 0 2 2 0A C

3 phase IGBT inverter

Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Contextual Info: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

h30r1602

Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
Contextual Info: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:

h30r1602

Abstract: "h30r1602" h30r1602 by IHY30N160R2 igbt 1600V 20A igbt 1000v 30a igbt 600V 30A H30R1
Contextual Info: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :

Contextual Info: 60EPS RECTIFIER DIODE Reverse Voltage: Forward Current: 800 to 1600V 60A Features z z z Circuit z z Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Case Style TO-247AC RoHS Compliance Applications ● Input rectification Module Type

60EPS08

Abstract: 60EPS12 60EPS16
Contextual Info: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-239-48 60EPS08 diodTO-247 70-239-55 60EPS12 diodTO-247 Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE

Contextual Info: Bulletin I2122 rev. B 01/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.07V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features The 60EPS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage.

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

P035H

Abstract: 30TPS 30TPS16
Contextual Info: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

Contextual Info: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

30TPS

Abstract: 30TPS16 P035H
Contextual Info: Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1600V Description/ Features The 30TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has

2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Contextual Info: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position