60EPS16 Search Results
60EPS16 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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60EPS16 | International Rectifier | INPUT RECTIFIER DIODE | Original | 86.04KB | 5 | ||
60EPS16-B1-0000HF | Yangzhou Yangjie Electronics | DIODE GEN PURP 1600V 60A TO247AC | Original | 238.25KB | |||
60EPS16PbF | International Rectifier | DIODE STANDARD RECOVERY RECTIFIER 1600V 60A 2TO-247AC | Original | 160.51KB | 6 |
60EPS16 Price and Stock
Vishay Semiconductors VS-60EPS16-M3DIODE STANDARD 1600V 60A TO247AC |
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VS-60EPS16-M3 | Tube | 423 | 1 |
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Vishay Semiconductors VS-60EPS16PBFDIODE STANDARD 1600V 60A TO247AC |
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VS-60EPS16PBF | Tube |
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Vishay Intertechnologies VS-60EPS16-M3Diode Rectifier 1600V 60A 2-Pin TO-247AC Tube - Rail/Tube (Alt: VS-60EPS16-M3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VS-60EPS16-M3 | Tube | 16 Weeks | 500 |
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VS-60EPS16-M3 | 2,584 |
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VS-60EPS16-M3 | Bulk | 500 |
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VS-60EPS16-M3 | Tube | 500 |
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VS-60EPS16-M3 | 1 |
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VS-60EPS16-M3 | 17 Weeks | 25 |
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Vishay Intertechnologies VS-65EPS16L-M3Rectifiers Single Diode Alt VS-60EPS16-M3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VS-65EPS16L-M3 | Tube | 500 |
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Vishay Intertechnologies VS60EPS16Electronic Component |
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VS60EPS16 | 12 |
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60EPS16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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p035h
Abstract: 60EPS16
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Original |
I2185 60EPS16PbF 60EPS16PbF O-247AC p035h 60EPS16 | |
DIODE 60 A
Abstract: 60EPS16
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Original |
60EPS16PbF O-247AC 18-Jul-08 DIODE 60 A 60EPS16 | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 JEDEC-JESD47 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2 |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable |
Original |
60EPS16PbF O-247AC 12-Mar-07 | |
Contextual Info: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable |
Original |
60EPS16PbF O-247AC 11-Mar-11 | |
Contextual Info: VS-60EPS16PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Designed and JEDEC-JESD47 2 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode • Typical applications are in input rectification and these |
Original |
VS-60EPS16PbF JEDEC-JESD47 2002/95/EC O-247AC VS-60EPS16PbF 11-Mar-11 | |
DIODE 60 A
Abstract: 60EPS16
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Original |
60EPS16 O-247AC 18-Jul-08 DIODE 60 A | |
Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate |
Original |
I2185 60EPS16PbF 60EPS16PbF 08-Mar-07 | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2 |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable |
Original |
60EPS16PbF O-247AC 11-Mar-11 | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 TO-247AC modified |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2 |
Original |
VS-60EPS16PbF, VS-60EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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60EPS16
Abstract: P035H
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Original |
I2185 60EPS16PbF 60EPS16PbF 12-Mar-07 60EPS16 P035H | |
4512 diodeContextual Info: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable |
Original |
60EPS16PbF O-247AC 18-Jul-08 4512 diode | |
I2122
Abstract: 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE"
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Original |
I2122 60EPS. O-247AC 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE" | |
T 4512 H diode
Abstract: diode T 4512 H diode rectifier p 600
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OCR Scan |
60EPS. 800tig. O-247AC T 4512 H diode diode T 4512 H diode rectifier p 600 | |
60EPS08
Abstract: 60EPS12 60EPS16
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Original |
60EPS08 diodTO-247 60EPS12 I2122 60EPS. availabl17) O-247AC 60EPS16 | |
vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
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Original |
VMN-SG2178-1111 vishay 1N4007 DO-214AC VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100 | |
035H
Abstract: 60EPS08 60EPS12 60EPS16
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Original |
I2122 60EPS. 15ability, 12-Mar-07 035H 60EPS08 60EPS12 60EPS16 | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
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Original |
100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter | |
Contextual Info: 60EPS RECTIFIER DIODE Reverse Voltage: Forward Current: 800 to 1600V 60A Features z z z Circuit z z Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Case Style TO-247AC RoHS Compliance Applications ● Input rectification Module Type |
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60EPS O-247AC 60EPS08 60EPS12 60EPS16 | |
60EPS08
Abstract: 60EPS12 60EPS16
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Original |
I2122 60EPS. O-247AC 60EPS08 60EPS12 60EPS16 |