16384X1 RAM Search Results

Contextual Info: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL

Contextual Info: G E C P L E S S E Y ma9067 BmBiDQQmBQQQI Ra<^'at'on H a rd 16384x1 Bit Static RAM Preliminary Data S10300PDS issue 2.3 O ctober 1990 Features • 1.5|im CM OS-SOS technology • Latch up free • Fast access time 100ns typical • Total dose 106 rad (Si)

HM 65767B

Abstract: 300MILS
Contextual Info: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using

t 16 k

Abstract: F01011
Contextual Info: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum

65728

Contextual Info: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus

16x4

Abstract: 16384x1 ram
Contextual Info: Bipolar Memory Bipolar Memory RAM Functional Index and Selection Guide Part Number RAM B IP O L A R E C L R A M A c c e s s Tim e Iee C O M ’ L/M IL C O M ’L/M IL O rganization Max Max ECL Serie« Number o f P in s Packages -1 5 0 /-1 6 5 10K 16 d ,p ,f ,l

256X4

Abstract: 1024x4 AM2168 Am91L22
Contextual Info: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active

hm65767

Abstract: HM 65767B 65767B
Contextual Info: HM 65767B DATA SHEET_ 16 Kx 1 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY : 110 mW (max) WIDE TEMPERATURE RANGE : - 55'C TO + 125’C

Contextual Info: HM 65767B DATA SHEET 16 K x 1 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY: 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY: 110 mW (max) . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS

Contextual Info: DATA SHEET_ HM 65767B 16 K x 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

Contextual Info: IlM lI September 1989 HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

Contextual Info: T> m SñbñMSb OGQllD? n llll I f T MATRA MTT « M f l H S l i i September 1990 il H S HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES . . . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

Contextual Info: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages

ra1613

Abstract: FB360 HSTL18 XC2V3000-BG728 XC3S1000-FT256 XC3S200-ft256 X2P376 X2P528 X2P680 BGA 728 35x35 1.27
Contextual Info: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

Contextual Info: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations

delta39k

Contextual Info: Delta39KTM and Quantum38KTM Single-Port Memory Introduction Channel and Cluster Memory The purpose of this application note is to provide instruction for all aspects of implementing synchronous/asynchronous Single-Port Random-Access-Memory SPRAM and Single-Port Read-Only-Memory (SPROM) in Delta39K and

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

MOSTEK 36000

Abstract: 3861 mostek MK2408P MK2500P
Contextual Info: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .