164M Search Results

SST32HF164-90-4E-EK

Abstract: SST32HF162 SST32HF164 SST32HF802 SW-5520
Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM

Contextual Info: PKG-EDG-PS-DM THE EDGE LED Parking Structure – Petroleum Symmetric BetaLED Catalog #: PKG - EDG - PS - DM - 02 - D - - - 350 - Rev. Date: 2/2/12 - 6.5" [ 164mm ] 17.5" [ 444mm ] Notes: Product PKG Family EDG Optic PS Mounting 1 DM # of LEDs x 10 2

Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM

Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM

105M

Abstract: 120M MHF215-03A
Contextual Info: yMHF215 SERIESz For 25”` Color TV `@Ð@i@¼ MHF215-03A MHF215-08A MHF215-12A MHF215-13A MHF215-14A è@E@@@³ GI 14.5 KVD.C 164M¶}20% 13.5 KVD.C 200M¶}20% 13.5 KVD.C 120M¶}20% 12.0 KVD.C 105M¶}20% 13.5 KVD.C 120M¶}20% G2 60.3 M¶ 35.6 M¶ 15.1 M¶ 2.5 M¶

105M

Abstract: 120M m 427 MHF215-03A
Contextual Info: [MHF215 SERIES] For 25” ~Color TV Part Name MHF215-03A MHF215-08A MHF215-12A MHF215-13A MHF215-14A Rating Voltage 14.5 KVD.C 13.5 KVD.C 13.5 KVD.C 12.0 KVD.C 13.5 KVD.C RT 164MΩ±20% 200MΩ±20% 120MΩ±20% 105MΩ±20% 120MΩ±20% R1 60.3 MΩ 35.6 MΩ

Contextual Info: HARRIS SEÎIICOND SECTOR SÔE D • M302E71 O Ü 4 M l ci2 SES « H A S H CS 164MS & h t* *1 Radiation Hardened 8-Bit Serial-ln/Parallel-Out Register December 1992 ~ Features • 3 Micron Radiation Hardened CMOS SOS -F ^ -o q -o s 14 PIN CERAMIC DUAL-IN-LINE

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the

Contextual Info: PKG-EDG-15-DM THE EDGE LED Parking Structure – 15º Flood BetaLED Catalog #: PKG - EDG - 15 - DM - 02 - D - - - 350 - Rev. Date: 9/21/11 - 6.5" [ 164mm ] 17.5" [ 444mm ] Notes: Product Family PKG EDG Optic 15 1 Mounting DM # of LEDs x 10 2 02 LED Series

Contextual Info: REV PERFORMANCE SPECIFICATIONS: DESCRIPTION SYM MIN TYP MAX INPUT VOLTAGE VIN 10.0 12.0 16.0 INPUT CURRENT liN - 230 -OUTPUT VOLTAGE VL 900 1000 -OUTPUT CURRENT 4.0 5.0 6.0 IL OSC. FREQUENCY Fo 45.0 55.0 65.0 Fpw 435 455 475 PWM FREQUENCY TESTED WITH I EACH 3MM X 164MM LAMP, AT

Contextual Info: PKG-EDG-40-DM THE EDGE LED Parking Structure – 40º Flood BetaLED Catalog #: PKG - EDG - 40 - DM - 02 - D - - - 350 - Rev. Date: 2/2/12 - 6.5" [ 164mm ] 17.5" [ 444mm ] Notes: Product Family PKG Optic EDG 40 1 Mounting DM # of LEDs x 10 2 02 LED Series

Contextual Info: Preliminary FTR-K1 SERIES New relay, production not started, engineering samples available POWER RELAY 1 POLE - 10A changeover relay FTR-F3 Series n FEATURES Low profile and space saving - Height: 15mm - Mounting space: 164mm2 l High insulation - Insulation distance: 7mm between coil and contacts

Contextual Info: ISO7420 ISO7420M ISO7421 www.ti.com SLLS984H – JUNE 2009 – REVISED MAY 2013 Low-Power Dual Digital Isolators Check for Samples: ISO7420, ISO7420M, ISO7421 FEATURES APPLICATIONS • • • 1 2 • • • • • • • • Highest Signaling Rate: 1 Mbps

Contextual Info: CDCM7005 www.ti.com SCAS793B – JUNE 2005 – REVISED OCTOBER 2005 3.3-V HIGH PERFORMANCE CLOCK SYNCHRONIZER AND JITTER CLEANER GND GND GND GND GND GND C VBB GND AVCC AVCC AVCC AVCC AVCC GND STATUS_ REF or PRI_SEC_ CLK STATUS_ D VCXO_IN GND GND GND GND GND

UE 40 F 6470

Abstract: pid u 13t
Contextual Info: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention

CDCM7005HFG-V

Abstract: smd y1a
Contextual Info: CDCM7005-SP www.ti.com . SGLS390A – JULY 2009 – REVISED AUGUST 2009 3.3-V HIGH PERFORMANCE RAD-TOLERANT CLASS V, CLOCK SYNCHRONIZER AND

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

PDL03-24D15

Abstract: IEC60950-1 SMD INDUCTOR
Contextual Info: FEATURES • 3 WATTS MAXIMUM OUTPUT POWER • OUTPUT CURRENT UP TO 700mA • SIP PACKAGE, 0.86 x 0.36x 0.44 INCH • HIGH EFFICIENCY UP TO 85% • 2:1 WIDE INPUT VOLTAGE RANGE • SWITCHING FREQUENCY 100KHz, MIN • NO EXTERNAL INPUT AND OUTPUT CAPACITOR NEEDED

Contextual Info: XRP7604 1A 29V Non-Sync. Buck High Power LED Driver March 2009 Rev. 1.0.0 GENERAL DESCRIPTION APPLICATIONS The XRP7604 is a non-synchronous voltage mode PWM step down converter with integrated high side FET optimized to drive high power LEDs at up to 1A of continuous

FDD6672A

Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F63TNR FDD2570 FDD6680
Contextual Info: FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.7 A, 150 V. RDS ON = 80 mΩ @ VGS = 10 V

CBVK741B019

Abstract: F63TNR FDD6680 FDD6690A
Contextual Info: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior

CBVK741B019

Abstract: F63TNR FDD5612 FDD6680
Contextual Info: FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V.

TO-252 N-channel power MOSFET

Contextual Info: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V