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    16L4502 Search Results

    16L4502 Datasheets Context Search

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    igct abb

    Abstract: 16L45 IGCT a7000 5SDF16L4502
    Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology


    Original     		16L4502 CH-5600 igct abb 16L45 IGCT a7000 5SDF16L4502 PDF

    7000UC

    Abstract: 5SDF16L4502 106A2 16L4502
    Contextual Info: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology


    Original     		16L4502 CH-5600 7000UC 5SDF16L4502 106A2 16L4502 PDF

    diode sy 170

    Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
    Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.


    OCR Scan     		PDF

    FSV 052

    Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052 PDF