16JUL07 Search Results

Contextual Info: 107-68147 Packaging Specification 16Jul07 Rev C PLUG ASSY,COMMERCIAL MATE-N-LOK 1. PURPOSE 目的 Define the packaging specifiction and packaging method of PLUG ASSY,COMMERCIAL MATE-N-LOK. 订定 PLUG ASSY,COMMERCIAL MATE-N-LOK. 产品之包装规格及包装方式.

E14D

Contextual Info: Outline Dimensions Vishay High Power Products I-PAK DIMENSIONS in millimeters E A b3 E1 c2 3 2 1 L L5 L4 H D D1 4 b2 e c e SYMBOL DIMENSIONAL REQUIREMENTS MIN. NOM. MAX. E 6.40 6.60 6.70 L 5.88 6.08 6.28 L4 0.66 0.76 0.86 L5 1.96 2.16 2.36 D 6.00 6.10 6.20

Si5915BDC

Contextual Info: SPICE Device Model Si5915BDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiA513DJ

Contextual Info: SPICE Device Model SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiA513DJ

Contextual Info: SPICE Device Model SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4662DY

Abstract: a3546 v536
Contextual Info: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5915BDC

Contextual Info: SPICE Device Model Si5915BDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

16JUL07

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION - ,- ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. B , / 1\ n / P I (P 2 ) MOD PLU G W H T /O R G MOD PLUG \„ / ' ORG \n \ -i / A / u \ 4 \ c / U\ r / 0 \ / * - W H T /G R N

100k250

Abstract: vsrj Y0075 VSR VISHAY
Contextual Info: VSR Series Vishay Foil Resistors Bulk Metal Foil Technology Industrial Precision Resistors with TCR of ± 4 ppm/°C and Tolerance of ± 0.01 % FEATURES Any value at any tolerance available with resistance range INTRODUCTION Bulk Metal® Foil Technology out performs all other resistor

si4409

Abstract: Si4409DY
Contextual Info: SPICE Device Model Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

Contextual Info: 4 THIS DRAWING IS U N PU BLISH ED . VLy COPYRIGHT - 3 RELEA SED FOR PUBLICATION - ,- ALL RIGHTS R ESERV ED . BY TYCO ELECTRONICS CORPORATION. D C B , / ' \ P 1 MOD PLUG W H T/O R G n / ^ \ ORG ^/ u \ W H T /G R N / 4 \ BLU C/ ^ \ W H T/BLU r ^ u \ GRN /

7900v

Abstract: 200POS socket DDR 0.6mm 200
Contextual Info: 4 T H IS D R A W IN G C O P Y R IG H T IS 3 U N P U B L IS H E D . 2007 BY ^ 0 0 RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S 2 MAR , 2 0 0 7 . R E V IS IO N S RESERVED. LTR R E V IS E D PER D E S C R IP T IO N

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: PA 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

SiA413DJ

Contextual Info: SPICE Device Model SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ceramic capacitor footprint 0201 dimension

Abstract: VJ0402 surface Capacitor 1uf 100V 1210 x7r
Contextual Info: Class 1 High Q 16/25/50/100V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES • Ultra stable class 1 dielectric • High Q and low ESR at high frequency RoHS • Four standard sizes • • • • COMPLIANT High capacitance per unit volume

a3546

Abstract: Si4662DY V536
Contextual Info: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SIA417DJ

Abstract: 7A38 A3823
Contextual Info: SPICE Device Model SiA417DJ Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SRF10-10

Abstract: SRF10100 SRF1070 SRF1080 SRF1090
Contextual Info: SRF1070 thru SRF10100 Switchmode Full Plastic Dual Schottky Power Rectifiers P b Lead Pb -Free Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. VLy COPYRIGHT - 3 RELEASED FOR PUBLICATION - ,- ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D C , / ' \ n ^ / \ ° / \ A / 4 \ C U / \ r u / -7 ' / \ ° \ B P 1 MOD PLUG W H T /O R G (P 2 ) MOD PLUG \, 7 ORG \ n

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D C PI MOD PLUG (P 2 ) MOD PLUG B •^6 ■>8 WIRING D IA G R A M A T568B A AMP 1471-9 REV 31MAR2000 2 1 LOC ES DIST 00 REVISIONS LTR

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation