16JUN03 Search Results

Contextual Info: Si7947DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.014 @ VGS = - 10 V - 13.7 0.025 @ VGS = - 4.5 V - 10.1 APPLICATIONS D Battery Switch D Load Switch - 30 PowerPAKt SO-8

M41ST84W

Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
Contextual Info: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU

CLOCK GENERATOR 1HZ

Abstract: quartz kds M41ST84W AN1012 ABE smd
Contextual Info: M41ST84W 3.0/3.3V I2C Serial RTC with Supervisory Functions KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and DESELECT – Power-fail Deselect, VPFD = 2.60V nom – Switchover, VSO = 2.50V (nom) 400kHz I2C SERIAL INTERFACE 3.0/3.3V OPERATING VOLTAGE

XO-543

Contextual Info: XO-543 Vishay Dale Full Size Clock Oscillators TTL/HCMOS Compatible FEATURES • 14 pin full size • Industry standard • Wide frequency range • Low cost • Tri-State enable/disable • Resistance weld package The XO-543 series is with 3.3V power supply. The metal

Contextual Info: 6 7 T H I S DRAWING JÊL COPYRI GHT I S U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 19 4 5 2 3 LOG , 19 ALL R IG H T S R ES E R V E D . DI ST AD REVISIONS 25 DESCRIPTION EC 0 0 1 0 - 1 6 0 1 - 9 4 A 1/21/94 REV PER EC 0 5 1 2 - 0 0 1 6 - 0 3

Si7368DP

Abstract: Si7368DP-T1
Contextual Info: Si7368DP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS x Qg Figure of Merit D Optimized For High Frequency Conversion PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 20 0.0085 @ VGS = 4.5 V

SUM110N03-03

Contextual Info: SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 30 0.0025 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage

S-31261

Abstract: SUD50P04-09L
Contextual Info: SUD50P04-09L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY - 40 D TrenchFETr Power MOSFET D 175_C Junction Temperature rDS(on) (W) ID (A)d 0.0094 @ VGS = - 10 V - 50 APPLICATIONS 0.0145 @ VGS = - 4.5 V - 50 D Automotive 12-V Boardnet

Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1

Contextual Info: Si7390DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY

SUP80N15-20L

Contextual Info: SUP80N15-20L New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold

Contextual Info: Si7356DP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V)

CECC00802

Abstract: THCA
Contextual Info: VISHAY Vishay Semiconductors Assembly Instructions General Optoelectronic semiconductor devices can be mounted in any position. Connecting wires of less than 0.5 mm diameter may be bent, provided the bend is not less than 1.5 mm from the bottom of the case and no mechanical stress

CECC00802

Abstract: THCA
Contextual Info: VISHAY Vishay Semiconductors Assembly Instructions General Optoelectronic semiconductor devices can be mounted in any position. Connecting wires of less than 0.5 mm diameter may be bent, provided the bend is not less than 1.5 mm from the bottom of the case and no mechanical stress

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers

Contextual Info: SUD70N02-03P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0033 @ VGS = 10 V 39 APPLICATIONS 0.0053 @ VGS = 4.5 V 31 D Synchronous Buck Converter - Low-Side - Secondary Synchronous Rectifier VDS (V)

Contextual Info: SUD70N03-04P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 33

Contextual Info: Si5935DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.086 @ VGS = - 4.5 V - 4.1 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint 0.121 @ VGS = - 2.5 V

Si6544BDQ

Abstract: S-31251-Rev
Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V

DG9424

Abstract: DG9424DQ DG9425 DG9426
Contextual Info: DG9424/9425/9426 Vishay Siliconix Low-Voltage, Dual Supply, Low rON, Quad SPST Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—rDS on : 1.7 W D Fast Switching —tON: 42 ns —tOFF: 28 ns

ABE smd

Contextual Info: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x8 Serial RTC with Supervisory Functions FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5.0 OR 3.0V OPERATING VOLTAGE SERIAL INTERFACE SUPPORTS I2C BUS (400kHz) OPTIMIZED FOR MINIMAL

Si6544BDQ

Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V

SUM16N20-125

Contextual Info: SUM16N20-125 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.125 @ VGS = 10 V 16 0.150 @ VGS = 6 V 14.6 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package

Contextual Info: SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 30 0.0025 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage