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Amphenol Communications Solutions NTHCAA22A1001B0NTHCAA22A1001B0 |
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Amphenol Communications Solutions NTHCAB22B1001F0NTHCAB22B1001F0 |
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Amphenol Communications Solutions NTHCAA13210001FNTHCAA13210001F |
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Amphenol Communications Solutions NTHCAC22A1602F0NTHCAC22A1602F0 |
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Amphenol Communications Solutions NTHCAA22210001SNTHCAA22210001S |
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THCA Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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THC-A-20 | Sprague | Semiconductor Data Book 1977 | Scan | 69.85KB | 1 | |||
THC-A-65 | Sprague | Semiconductor Data Book 1977 | Scan | 69.85KB | 1 |
THCA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Deutsch
Abstract: DT DEUTSCH
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ADSP-21489 user manual
Abstract: ADSP-21487 sharc ADSP-214xx FFT Accelerator medialb ADSP-21160 ADSP-21161 ADSP-21489 ADSP21487 sharc iir filter IBIS Model diode
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SP-21486/ADSP-21487/ADSP-21488/ADSP-21489 ADSP-2148x 32-bit/40-bit D09018-0-12/10 ADSP-21489 user manual ADSP-21487 sharc ADSP-214xx FFT Accelerator medialb ADSP-21160 ADSP-21161 ADSP-21489 ADSP21487 sharc iir filter IBIS Model diode | |
PertinaxContextual Info: VISHAY _ Vishay Telefunken ▼ Assembly Instructions General Surface Mounted Devices S em iconductor devices can be m ounted in any position. The term inal length may be bent at a distance greater than 1.5 mm from the case provided no |
OCR Scan |
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nas 1791
Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
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TC35190F TC35190F T08HIBA TC3B190F S9-29-20 nas 1791 pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA | |
Contextual Info: IBM0164805B IBM0164805P 8 M x 8 13/10 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time |
OCR Scan |
IBM0164805B IBM0164805P 128ms 104ns 128ms 115ma 100ma; | |
Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) |
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IBM11M2645H 2Mx64 104ns 124ns | |
Contextual Info: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden |
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72-Pin 104ns 124ns 11D1325L IBM11D2325L 26H3205 26H3206) 50H7995 | |
Contextual Info: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) |
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IBM0117405 IBM0117405M IBM0117405B IBM0117405P 28H4726 28H4726. 350ns 350ns) | |
Contextual Info: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh |
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IBM0165165B IBM0165165P 104ns 526mW 165ma 175ma 135ma 145ma; | |
Contextual Info: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC |
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IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16Mx64 16Mx72 104ns 75H1640 SA14-4626-02 DD05225 | |
Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns ! |
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IBM11S4325BP IBM11S4325BM 72-Pin 104ns 124ns | |
Contextual Info: LM V 1089 LMV1089 Dual Input, Far Field Noise Suppression Microphone Amplifier with Automatic Calibration Capability T ex a s In s t r u m e n t s Literature Number: SNAS441H t Semiconductor LMV1089 Dual Input, Far Field Noise Suppression Microphone Am plifier with Autom atic Calibration Capability |
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LMV1089 SNAS441H LMV1089 | |
transistor SMD BR21
Abstract: SMD Transistor W08 adsp-21369ksz smd w04 74 smd code t04 smd code W06 transistor SMD W06 sMD .v05 smd transistor w04 SMD Transistors w06 56
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ADSP-21367/ADSP-21368/ADSP-21369 ADSP-21367/ADSP-21368/ADSP-21369 32-bit/40-bit ADSP-21369KSZ-1A2 ADSP-21368BBP-2A 256-Ball BP-256 D05267-0-8/06 transistor SMD BR21 SMD Transistor W08 adsp-21369ksz smd w04 74 smd code t04 smd code W06 transistor SMD W06 sMD .v05 smd transistor w04 SMD Transistors w06 56 | |
ADSP-21535PKB-300
Abstract: EC38J ADSP-21535 Blackfin dsp 131070
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ADSP-21535 16-Bit 40-Bit 40-Bit 260-Lead B-260) ADSP-21535PKB-300 ADSP-21535PKB-300 EC38J ADSP-21535 Blackfin dsp 131070 | |
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T649NContextual Info: N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor T649N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max Kenndaten |
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T649N A2/86 T649N | |
KM17
Abstract: ND261N
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ND261N KM17 ND261N | |
DZ540N
Abstract: KM17
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DZ540N DZ540N KM17 | |
4650N
Abstract: KM17 TZ310N
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TZ310N 4650N KM17 TZ310N | |
TT92N
Abstract: 4650N DT92N KM14 NT92N TD92N
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TT92N TD92N DT92N TT92N. TD92N. NT92N 1700hnical TT92N 4650N DT92N KM14 NT92N TD92N | |
4650N
Abstract: DT310N KM17 TD310N TT310N
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TT310N TD310N DT310N TT310N. 4650N DT310N KM17 TD310N TT310N | |
4650N
Abstract: KM17 TZ400N
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TZ400N 4650N KM17 TZ400N | |
KM17
Abstract: ND260N
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ND260N KM17 ND260N | |
TZ800NContextual Info: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ800N TZ800N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max |
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TZ800N TZ800N | |
4650N
Abstract: KM17 TD570N TT570N
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TT570N TD570N TT570N. 4650N KM17 TD570N TT570N |