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    IS43DR83200A

    Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
    Text: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle


    Original     		PDF IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 18-compatible) IS43DR32160A-37CBLI 400Mhz IS43DR32160A-5BBLI IS43DR83200A IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32

    IS42S16320D-7TLI

    Abstract: IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400
    Text: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 PRELIMINARY INFORMATION JUNE 2011 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 512Mb IS42/45SxxxxxD IS42/45RxxxxxD IS42/45R86400D/16320D/32160D, IS42S16320D-7TLI IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400

    HSD16M32D4

    Abstract: HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12
    Text: HANBit HSD16M32D4 Synchronous DRAM Module 64Mbyte 16Mx32-Bit , 100pin DIMM, 4Banks, 8K Ref., 3.3V Part No. HSD16M32D4 GENERAL DESCRIPTION The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.


    Original     		PDF HSD16M32D4 64Mbyte 16Mx32-Bit) 100pin HSD16M32D4 400mil 100-pin HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12

    IS42S32160C

    Abstract: 42S32160C is42s32160 IS42S32160C-75BLI
    Text: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page


    Original     		PDF IS42S32160C 16Mx32 512Mb IS42S32160C IS42S32160C-75BL IS42S32160C-6BL 8x13mm 42S32160C is42s32160 IS42S32160C-75BLI

    Untitled

    Abstract: No abstract text available
    Text: WED3DL3216V White Electronic Designs PRELIMINARY 16Mx32 SDRAM FEATURES DESCRIPTION The WED3DL3216V is an 16Mx32 Synchronous DRAM configured as 4x4Mx32. The SDRAM BGA is constructed with two 16Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 17mm


    Original     		PDF WED3DL3216V 16Mx32 WED3DL3216V 4x4Mx32. 16Mx16 133MHz, 125MHz, 100MHz.

    16MX32

    Abstract: IS42RM32160C
    Text: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full


    Original     		PDF IS42SM32160C IS42RM32160C 16Mx32 512Mb IS42SM/RM32160C IS42SM32160C-7BLI IS42SM32160C-75EBLI 8x13mm IS42RM32160C

    Untitled

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 11Preliminary 512Mbit 32bits 200us

    sc413

    Abstract: BC163 quanta GND194 g7001 G71M-U AK-34 DDR3 Infineon quanta computer Quanta AT8
    Text: 5 4 3 2 CH-A NVIDIA PCI-E x16 D G71M G71M-U CH-B FCBGA 1148pin TV CH-C C CRT MXM CONNECTOR 1 VRAM GDDR3 8Mx32 16Mx32 D VRAM GDDR3 8Mx32 16Mx32 VRAM C GDDR3 8Mx32 16Mx32 LVDS CH-D VRAM GDDR3 8Mx32 16Mx32 2.5V B B 3.3V A VIN VCORE VRM VIN 1.8V VRM VCORE A 1.8V


    Original     		PDF 8Mx32 16Mx32 G71M-U 1148pin sc413 BC163 quanta GND194 g7001 G71M-U AK-34 DDR3 Infineon quanta computer Quanta AT8

    RFU20

    Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
    Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9


    Original     		PDF 8Mx32 16Mx32 820pin NONPHY-X16 FG-13X91-20-230P H-C236D118P2 RFU20 G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer

    H55S5132DFR

    Abstract: H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram H55S5122DFR
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit H55S5122DFR H55S5132DFR 32bits 200us H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram

    samsung CL21

    Abstract: K4X51323PE CL21 CL31 DDR266 DDR333
    Text: K4X51323PE - 7 8 E/G Mobile DDR SDRAM 16Mx32 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)


    Original     		PDF K4X51323PE 16Mx32 samsung CL21 CL21 CL31 DDR266 DDR333

    hy5rs123235b

    Abstract: HY5RS123235BFP HY5RS123235
    Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS123235BFP 512Mbit 16Mx32) HY5RS123235BFP hy5rs123235b HY5RS123235

    DIMM 100 Pin

    Abstract: 32174ASQM4G09T
    Text: 16M x 32 Bit 100 PIN SDRAM DIMM 100 PIN SYNCHRONOUS DRAM DIMM 32174ASQM4G09T 100 Pin 16Mx32 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment Pin# Front Side Pin# Back Side Pin# Front Side Pin# Back Side 1 Vss 51 Vss 26 Vss


    Original     		PDF 32174ASQM4G09T 16Mx32 DS623-0 DIMM 100 Pin

    321606-S54T15TD

    Abstract: No abstract text available
    Text: 16M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 321606-S54T15TD 72 Pin 16Mx32 FPM SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 PD5 12 A0 13 A1 14


    Original     		PDF 321606-S54T15TD 16Mx32 16Mx4 DS512

    HY5DU113222FM

    Abstract: No abstract text available
    Text: HY5DU113222FM P 512M(16Mx32) GDDR SDRAM HY5DU113222FM(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU113222FM 16Mx32) 912-bit 256Mbit 144ball

    Untitled

    Abstract: No abstract text available
    Text: HANBit HMD16M32M8EH 64Mbyte 16Mx32 72-pin EDO Mode 4K Ref. SIMM Design 5V Part No. HMD16M32M8EH GENERAL DESCRIPTION The HMD16M32M8EH is a 16M x 32bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A


    Original     		PDF HMD16M32M8EH 64Mbyte 16Mx32) 72-pin HMD16M32M8EH 32bit 32-pin 72-pin,

    HY5S7B2ALFP

    Abstract: RA12
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit 32bits 200us HY5S7B2ALFP RA12

    KMM53616000CK

    Abstract: KMM53616000CKG
    Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG


    Original     		PDF KMM53616000CK/CKG 16Mx36 16Mx4 16Mx1 KMM53616000CK/CKG 16Mx1, KMM53616000C KMM53616000CK KMM53616000CKG

    IS42VM32160C

    Abstract: No abstract text available
    Text: IS42VM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full


    Original     		PDF IS42VM32160C 16Mx32 512Mb IS42VM32160C IS42VM32160C-75BL 8x13mm IS42VM32160C-75BLI IS42VM32160C-75BI IS42VM32160C-10BLI

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM FEATURES ADVANCED INFORMATION OCTOBER 2010 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR32160C 16Mx32 512Mb 18-compatible) -40oC DDR2-400B IS46DR32160C-5BBLA1

    is42s32160

    Abstract: No abstract text available
    Text: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page


    Original     		PDF IS42S32160C 16Mx32 512Mb IS42S32160C 90-Ball) is42s32160

    Untitled

    Abstract: No abstract text available
    Text: IS43/46R86400D IS43/46R16320D, IS43/46R32160D PRELIMINARY INFORMATION 16Mx32, 32Mx16, 64Mx8 FEBRUARY 2011 512Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word


    Original     		PDF IS43/46R86400D IS43/46R16320D, IS43/46R32160D 16Mx32, 32Mx16, 64Mx8 512Mb

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF


    OCR Scan     		PDF HYM5361600A 16Mx36 16Mx1 361600A 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 256ms