KMM53216004B Search Results

KMM53216004B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
KMM53216004BK-5		Samsung Electronics	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V		Original	PDF	409.14KB	19
KMM53216004BK-6		Samsung Electronics	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V		Original	PDF	409.14KB	19
KMM53216004BKG-5		Samsung Electronics	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V		Original	PDF	409.14KB	19
KMM53216004BKG-6		Samsung Electronics	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V		Original	PDF	409.14KB	19

KMM53216004B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.	OCR Scan	KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits	PDF
KMM53216004BK Abstract: KMM53216004BKG Contextual Info: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.	Original	KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG	PDF
KMM53216004BK Abstract: KMM53216004BKG Contextual Info: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs	Original	KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG	PDF
Contextual Info: DRAM MODULE KMM53216004BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this moudule.	Original	KMM53216004BV/BVG KMM53216004BV/BVG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 16Mx4	PDF
LTRW Contextual Info: KMM53216004BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216004BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.	OCR Scan	KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits KMM53216004BK LTRW	PDF