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    16N06 Search Results

    16N06 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    16N06
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    16N06LE
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    16N06LESM
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    16N06LESM9A
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    16N06SM
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
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    16N06 Price and Stock

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    Infineon Technologies AG BSC016N06NSSCATMA1

    TRENCH 40<-<100V PG-WSON-8
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    DigiKey BSC016N06NSSCATMA1 Tape & Reel 4,000 4,000
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    EBV Elektronik BSC016N06NSSCATMA1 53 Weeks 4,000
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    onsemi NTT2016N065M3S

    ELITESIC, 16 MOHM, 650 V, M3S,T2
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    DigiKey () NTT2016N065M3S Cut Tape 1,600 1
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    NTT2016N065M3S Digi-Reel 1,600 1
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    NTT2016N065M3S Tape & Reel 1,600 800
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    Avnet Americas NTT2016N065M3S Tape & Reel 23 Weeks 800
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    Mouser Electronics NTT2016N065M3S 480
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    Avnet Silica NTT2016N065M3S 24 Weeks 800
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    Master Electronics NTT2016N065M3S
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    onsemi NTTFS016N06CTAG

    MOSFET N-CH 60V 8A/32A 8WDFN
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    DigiKey () NTTFS016N06CTAG Cut Tape 1,459 1
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    NTTFS016N06CTAG Digi-Reel 1,459 1
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    Avnet Americas NTTFS016N06CTAG Tape & Reel 43 Weeks 6,000
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    Mouser Electronics NTTFS016N06CTAG 1,500
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    onsemi NVTFWS016N06CTAG

    MOSFET N-CH 60V 8A/32A 8WDFN
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    DigiKey () NVTFWS016N06CTAG Digi-Reel 1,413 1
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    NVTFWS016N06CTAG Cut Tape 1,413 1
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    Avnet Americas NVTFWS016N06CTAG Tape & Reel 50 Weeks 1,500
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    Rochester Electronics NVTFWS016N06CTAG 1,300 1
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    Richardson RFPD NVTFWS016N06CTAG 1,500
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    EBV Elektronik NVTFWS016N06CTAG 52 Weeks 1,500
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    Flip Electronics NVTFWS016N06CTAG 16,500
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    Master Electronics NVTFWS016N06CTAG
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    Vyrian NVTFWS016N06CTAG 471
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    onsemi NVMFWD016N06CT1G

    MOSFET 2N-CH 60V 9A 8DFN
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    DigiKey () NVMFWD016N06CT1G Cut Tape 1,380 1
    • 1 $3.40
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    NVMFWD016N06CT1G Digi-Reel 1,380 1
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    Avnet Americas NVMFWD016N06CT1G Tape & Reel 50 Weeks 1,500
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    Avnet Asia NVMFWD016N06CT1G 50 Weeks 1,500
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    Avnet Silica NVMFWD016N06CT1G 51 Weeks 1,500
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    EBV Elektronik NVMFWD016N06CT1G 52 Weeks 1,500
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    16N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 16N06LE, 16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan
    RFD16N06LE, RFD16N06LESM PDF

    16n06l

    Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
    Contextual Info: 16N06LE, 16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original
    RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027 PDF

    Contextual Info: 16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original
    RFD16N06LESM PDF

    Contextual Info: 16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original
    RFD16N06LESM RFD16N06LESM PDF

    16n06l

    Abstract: pspice model for ttl
    Contextual Info: m W HARRIS S E M I C O N D U C T O R March1994 16N06LE 16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected


    OCR Scan
    RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl PDF

    16N06

    Abstract: RFD16N06
    Contextual Info: 16N06LE, 16N06LESM Data Sheet Title FD1 06L D16 6LE M bt A, V, 47 m, gic vel, anwer OSTs) utho October 1999 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes


    Original
    RFD16N06LE, RFD16N06LESM TB334 16N06 RFD16N06 PDF

    16n06l

    Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
    Contextual Info: 16N06LE, 16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original
    RFD16N06LE, RFD16N06LESM 16n06l 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 PDF

    16n06le

    Contextual Info: 16N06LE, 16N06LESM in t e f s il D ata S h e e t 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    OCR Scan
    RFD16N06LE, RFD16N06LESM AN7254 AN7260. 16n06le PDF

    16n06l

    Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
    Contextual Info: 16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original
    RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 PDF