16NC Search Results

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

SFS4416

Contextual Info: SFS4416 SemiWell Semiconductor Logic N-Channel MOSFET Features • ■ ■ ■ Symbol Low RDS on (Max 0.018Ω )@VGS=10V D 5 4 G Low RDS(on) (Max 0.028Ω )@VGS=4.5V D 6 3 S Gate Charge (Typical 16nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel

SMK730

Abstract: SMK730P 16nC
Contextual Info: SMK730P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=400V Min. Low Crss : Crss=14pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.0Ω(Max.) D G Ordering Information

Contextual Info: STK730F Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730F

smk 830

Contextual Info: SMK830D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D D G Ordering Information

smk 830

Contextual Info: SMK830D Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code

STK730P

Contextual Info: STK730P Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730P

fqpf50n06

Contextual Info: QFET N-CHANNEL FQPF5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area

Contextual Info: Transistors IC SMD Type 600V N-Channel MOSFET KQB5N60 TO-263 Unit: mm 5.0A, 600 V. RDS ON = 2.0 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 16nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability

lf7a

Contextual Info: QFET N-CHANNEL FQB7N40, FQI7N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.

Contextual Info: PD -97447 IRFH5304PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@Tc(Bottom) = 25°C) 30 V 4.5 mΩ 16 nC 79 A PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC)

16nC

Abstract: 16-NC stk730
Contextual Info: STK730PS Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) D G Ordering Information

SMK830

Abstract: SMK830D
Contextual Info: SMK830D Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) D D G Ordering Information

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FQB5N60

Abstract: FQI5N60
Contextual Info: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V Advanced New Design R D S O N = 2 0 i 2 Avalanche Rugged Technology lD = 5.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)

SMK730P

Abstract: SMK730 16NC
Contextual Info: SMK730P Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=400V Min. Low Crss : Crss=14pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) D G Ordering Information

SMK730F

Abstract: SMK730
Contextual Info: SMK730F Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=400V Min. Low Crss : Crss=14pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) D G Ordering Information

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

SMK830

Contextual Info: SMK830FC Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D G Ordering Information

Contextual Info: SMK830FZ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D G Ordering Information

stk0460

Contextual Info: STK0460F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Ordering Information Type NO.

Contextual Info: QFET N-CHANNEL FQP6N45 FEATURES BVDSS = 450V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area

Contextual Info: QFET N-CHANNEL FQP5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area