173 MHZ RF TRANSMITTER Search Results

Contextual Info: Metal Shield Band Pass Filter 50Ω RBP-173+ 160 to 185 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5W at 25oC • Linear Phase, up to ± 4 deg. Typ @ Fc ± 15 MHz • Good VSWR, 1.2:1 Typ @ Pass Band

M112756

Abstract: GP731 RBP-173
Contextual Info: Metal Shield Bandpass Filter 50Ω RBP-173+ 160 to 185 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5W at 25oC • Linear Phase, up to ± 4 deg. Typ @ Fc ± 15 MHz • Good VSWR, 1.2:1 Typ @ Pass Band

FM transmitter circuit diagram

Abstract: how to code rf transmitter using PIC how keyboard encoder work circuit diagram of fm transmitter R 433 transmitter block diagram block diagram fm transmitter RF encoder used in transmitter circuit diagram of keypad connection to pic low power fm transmitter circuit diagram how to code rf 433mhz transmitter using PIC
Contextual Info: RADIO TRANSMITTER ENCODERS ‘ALUBOS’ & ‘TASTOMAT’ SERIES FM-103Cn-XXX FM-107Cn-XXX FEATURES • • • • • • • • • • • • • • HIGHLY SECURE PROTOCOL ‘103’ SUPPLIED IN ALUMINUIM ALUBOS ENCLOSURE ‘107’ SUPPLIED IN TASTOMAT ENCLOSURE

zt156

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV7025 The RF Line UHF Linear Power Transistor . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push-pull package configuration aids broadband amplifier designs.

fm transmitter 12 KM circuit diagram

Abstract: mm53200 UM3750 fm transmitter 60 KM circuit diagram MPT1344 XR-14412 afsk modem afsk fm transmitter 40 KM 10 km range fm transmitter
Contextual Info: FM 173 MHz Transmitter Module TXM173-4689-UK03 FEATURES • SMALL SIZE, DIRECT PCB MOUNTING • LOW POWER REQUIREMENTS 9mA@ 5 volt • DIRECT DIGITAL DATA INPUT (CMOS COMPATIBLE) • LICENCE EXEMPT 10 mW OUTPUT POWER, • TYPE APPROVED TO MPT1328 & MPT1344 (UK)

motorola L6

Abstract: linear amplifier 470-860 TPV7025
Contextual Info: MOTOROLA Order this document by TPV7025/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV7025 . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push–pull package

MM6016

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line UHF Linear Pow er Transistor . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push-pull package configuration aids broadband amplifier designs.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

Rf amplifier with frequency 1150 MHZ 20 db gain

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power MRF182 Field Effect Transistors MRF182S, R1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

SU 179 transistor

Abstract: SU 179
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

731 MOSFET

Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation

sp 0937

Abstract: VK200 inductor of high frequencies Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

MRF173

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

MRF151G

Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Contextual Info: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF151G hf amplifier

Abstract: MRF151G Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF151G

Abstract: MRF151G hf amplifier motorola MOSFET 935 0948 power fet motorola AN211A mrf151g 300 AN211A rf amplifier circuit mrf151g Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this