175 W LOW-VHF AMPLIFIER Search Results

VF175-88

Abstract: RF GAIN LTD VF175 mosfet vhf power amplifier H101X all mosfet vhf power amplifier 175 w low-vhf amplifier
Contextual Info: VF175-88 175 W Low-VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • 54 - 88 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min

BH Rf transistor

Abstract: AN-938 AN938
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB

AN-938

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

1h31

Abstract: J107 DIODE J57 diode j143
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum G ain = 11.5 dB

2N6255

Abstract: 4 watt VHF
Contextual Info: 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and

MRF237

Abstract: Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF1946A MRF transistor 237 MRF high power transistor
Contextual Info: Order this document by AN955/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN955 A COST EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF

mrf237 MOTOROLA

Abstract: choke vk200 VK200 inductor of high frequencies motorola MRF MRF237 motorola mrf237 Motorola transistors MRF vk200 choke VK200 mrf237 motorola application note amplifier power
Contextual Info: MOTOROLA Order this document by AN955/D SEMICONDUCTOR APPLICATION NOTE AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for Land Mobile Radios Prepared by: Ken Dufour

300w amplifier

Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Contextual Info: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.

NTE477

Contextual Info: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz

MRF237

Abstract: mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 MRF1946A Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for

TP2314

Abstract: j644
Contextual Info: 1EE D I b3L?25M 0 0 0 0 2 5 0 MOTOROLA SC MOTOROLA T | XS TRS /R F SEMICONDUCTOR TECHNICAL DATA TP2314 The RF Line V H F P o w e r T ran sìsto r Designed for 6 V to 12 V VHF applications and is intended for Class A, B or C medium power amplifiers, frequency multipliers or oscillator circuits.

2SC1946

Abstract: transistor 2sc1946
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN E P ITA X IA L PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions in mm FEATURES

2SC2237

Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •

2SC2694

Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •

2SC2628

Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

2SC2237

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

Granberg

Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers
Contextual Info: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola Semiconductor Products Sector Reprinted with permission of Microwaves & RF. November 1987 issue. 1987 Hayden Publishing Co. Inc., All rights reserved. MOTOROLA Semiconductor Products Inc.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •

BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Contextual Info: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

Contextual Info: GAE GREAT AMERICAN ELECTROINCS B2-8Z Silicon NPN power VHF transistor B2-8Z is designed for 8 volt power amplifier applications in communication equipment. Especially suited for portable transceivers where low battery voltage is used. Output Power: Frequency Range:

2sc2094

Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES

TRANSISTOR BV 32

Abstract: TRANSISTOR FQ
Contextual Info: GAE GREAT AMERICAN ELECTROINCS B2-8Z Silicon NPN power VHF transistor B2-8Z is designed for 8 volt power amplifier applications in communication equipment. Especially suited for portable transceivers where low battery voltage is used. Output Power: Frequency Range: