BLF245 Search Results

771-BLF245B

Abstract: transistor j127
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

Contextual Info: BLF245 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)68# Minimum Operating Temp (øC)

Contextual Info: BLF245C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85# Minimum Operating Temp (øC)

wirelesscommunication

Abstract: MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain

transistor j127

Abstract: transistor r5 BLF245B transistor j127 on
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

transistor j127

Abstract: class B push pull power amplifier philips Trimmer 60 pf PHILIPS 4312 amplifier philips Trimmers 60 pf RF push pull power amplifier BLF245B UGA377
Contextual Info: Product specification Philips Semiconductors VHF push-pull power MOS transistor PHILIPS T INT ERN AT IO NAL FEATURES 5fc>E D • - 711Gö2b 37-11 BLF245B 0DM3Ö1D 3T0 ■ PHIN PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability

philips ferroxcube 4c6

Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
Contextual Info: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER

BLF245B

Abstract: RF push pull power amplifier J127 BLF245
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jan 08 2000 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

Contextual Info: Philips Sem iconductors b b S 3T 31 OOBT^SB SOT M APX Product specification VH F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

BLF245C

Abstract: "RF Power"
Contextual Info: BLF245C RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .400 8L FLG C D A B F U LL R G FEATURES INCLUDE: O F E .1925 • PG = 16 dB Typical at 175 MHz

MEAB29

Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Contextual Info: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B PIN CONFIGURATION FEATURES

SD1446

Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31

BLF245

Abstract: SOT123 SOT123 Package MGP175
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control

Contextual Info: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Contextual Info: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

philips catalog potentiometer

Abstract: philips Trimmer 60 pf BLF245B 2222 capacitor philips transistor j127
Contextual Info: Philips Semiconductors bb53131 002111=2 512 M APX Product specification VHF push-pull power MOS transistor BLF245B N AMER P H I L I P S / D I S C R E T E b l E ~ì PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

transistor j127

Contextual Info: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BLF245

Abstract: MOSFET BLF245 SPECIFICATIONS
Contextual Info: BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PACKAGE STYLE .380 4L FLG • PG = 13 dB Typical at 175 MHz

blf245

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF power MOS transistor BLF245 PIN CONFIGURATION FEATURES • High power gain

transistor j127

Abstract: TRANSISTOR CATALOGUE c17 dual mos MBB157 transistor j127 on BLF245B EU2A MSB018
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION • High power gain • Easy power control

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left