17JUL00 Search Results

B003A

Contextual Info: R E LEA S ED FO R PUBLICATION THIS DRAWING IS U N PU B LIS H E D . COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD A DIST REVISIONS 39 LTR DESCRIPTION fiPVD DATE REV PER 0G3C— 0289— 00 BH JG 17JUL00 STANDOFFS: UP TO 9 P O S - 2 REQD ON THE

M 7401

Abstract: T7401 R5201 L 038 T2140 t4401 T-30401 t27201 T2400 R7201
Contextual Info: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS 39 AD LTR DESCRIPTION N □ATE REV PER 0G3C— 0 2 9 9 -0 0 OWN APVD BH JG 17JUL00 D D TYP AT POSTS TIPS 0.38 [.0 1 5 ]

marking code vishay SILICONIX

Abstract: ic 71074
Contextual Info: SÌ1407DL Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) -1 2 Id (A) •"DS(on) ( ß ) 0.130 @ VG S = -4 .5 V -1 .8 0.170 @ VGS = -2 .5 V -1 .5 0.225 @ VGs = -1 .8 V -1 .3 \V SOT-363 SC-70 (6-LEADS) Marking Code OC xx £ Lot Traceability

Si4872DY

Contextual Info: Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si1403DL

Contextual Info: Si1403DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.180 @ VGS = –4.5 V "1.5 0.200 @ VGS = –3.6 V "1.4 0.265 @ VGS = –2.5 V "1.2 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 Marking Code

sm403

Abstract: sot363 marking qs 71072
Contextual Info: SM403PL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY Vps(V) Id (A) r D S (o n) ( ^ ) 0.180 @ VG S= —4.5 V -2 0 VP ± 1 .5 0.200 @ VGS = -3 .6 V ± 1 .4 0.265 @ VGS = -2 .5 V ± 1 .2 A <0* SOT-363 SC-70 (6-LEADS) Marking Code

Si1405DL

Abstract: 8 A diode A.4 SOT363 MARKING
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

NAS1745

Abstract: NAS 1745 NAS-1745 raychem solder sleeve d-142-51 D-142-56 Raychem installation procedure rcps-100-70 J-STD-004 J-STD-006 RT-1404 NAS1
Contextual Info: SPECIFICATION CONTROL DRAWING Product Revisions Product Name D-142-50 J NAS Equiv. 1745-14 D-142-51 J 1745-15 D-142-52 J 1745-16 L1.52 L±0.06 15.75 (0.620) 15.75 (0.620) 19.05 (0.750) Product Dimensions B min 2.80 (0.110) 4.45 (0.175) 7.11 (0.280) C

Si4953ADY

Contextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET

SUU06N10-225L

Contextual Info: SUU06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET

SUU06N10-225L

Abstract: 40T10
Contextual Info: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: DRAWI NG THIS MADE DRAWING 0 IN IS 4 THIRD UNPUBLISHED. COPYRIGHT 2 3 ANGLE 19 PROJECTION RELEASED BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RI GHTS D I ST LOC ,19 G RESERVED. R EV I 5 I 0 N 5 86 p F ZONE LTR DESCRIPTION A REV PER

VJ0603

Abstract: VJ0805 VJ1206 VJ1210 Vishay VJ1206
Contextual Info: High Q Dielectric Vishay Vitramon Multilayer Ceramic Chip Capacitors FEATURES • COG is an ultra-stable dielectric offering a Temperature Coefficient of Capacitance TCC of 0 ± 30PPM/°C over the entire temperature range. • Low Dissipation Factor (DF).

Contextual Info: Si1403DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.180 @ VGS = –4.5 V "1.5 0.200 @ VGS = –3.6 V "1.4 0.265 @ VGS = –2.5 V "1.2 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 Marking Code

SUD06N10-225L

Contextual Info: SUD06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD06N10-225L S N-Channel MOSFET

Si1407DL

Contextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code

Contextual Info: 3 DRAWI NG THIS P MADE DRAWING COPYRIGHT RE SERVED. AMP IN 15 THIRD ANGLE UNPUBLISHED. 19 BY PRODUCTS RELEASED AMP MAY BE 2 PROJECTION FOR LOC PUBLICATION ] N C O R P O R A T E D , HA R R I S B U R G , P A . COVERED U .S . BY AND B O R E I GN ALL INTERNATIONAL

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL RIGHTS RESERVED. 5 6 4 3 1 2 ,19 AG 53 REVISIONS LTR RELEASED PER N P R 9 7 - 1 2 REV PER 0 S 1 D - 0 0 8 4 - 0 0 1 ? H O U S I N G - M A T E R I A L : LIGUI D - C R Y S T A L - P O L Y M E R

Contextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET

Si4872DY

Contextual Info: Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SUU06N10-225L

Contextual Info: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Contextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code