SI1405DL Search Results

Si1405DL

Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition

Si1405DL

Abstract: 71500 uA 072
Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI1405DL

Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Si1405DL

Abstract: 8 A diode A.4 SOT363 MARKING
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition

Si1405DL

Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

71500

Abstract: Si1405DL
Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

marking code 18 6pin

Abstract: 0935 DIODE Marking Code ob
Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition

Si1405DL

Abstract: A4V4
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Si1405DL

Abstract: uA 072 71500
Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SC70-6

Abstract: Si1405DL Si1405DL-T1
Contextual Info: Specification Comparison Vishay Siliconix Si1405BDH vs. Si1405DL Description: Package: Pin Out: P-Channel 1.8-V G-S MOSFET SC70-6 Identical Part Number Replacements Si1405BDH-T1-E3 Replaces Si1405DL-T1-E3 Si1405BDH-T1-E3 Replaces Si1405DL-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Si1405DL

Abstract: SOT363
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

4946

Abstract: 4946 mosfet 4946 mosfet datasheet 1717 AN609 Si1405DL
Contextual Info: Si1405DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

230V ac to 5V dc usb charger circuit

Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

230V ac to 5V dc usb charger circuit

Abstract: ETSI ts 102.221 ETSI ts 102.221 V4.2.0 2742B schematic diagram 110v dc charger 103JT-025 PXA255 56H05C AT73C203 2742B-PMGMT-03
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or

103JT-025

Abstract: SeMitec Ishizuka Electronics uSIM sclk usim diode bat2c iso7816 sim PXA255 tR1200 ntc thermistors for inrush current limiting PXA255 ic diagram
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9 V Dynamically Adjustable to 0.87 V/1.1 V/1.2 V • DC to DC step Down 1.2 A, 1.2 V (Dynamically Adjustable to 1.0 V/1.1 V/1.3 V) or 1.75 V (Dynamically Adjustable 1.65 V/1.70 V/1.80 V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70 V/1.75 V/1.85 V) or

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

CR05-1R0JM

Abstract: ic chip ic 4410 JMK107BJ225KA-T 4410 siliconix TP1-TP13 EMK107BJ104MA LTC4053 LTC4410 ltc 4410 LN1351CTR
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT DC567 USB BATTERY CHARGER LTC4410/LTC4053 DESCRIPTION Demonstration circuit DC567 shows how to use the LTC 4410 USB power manager IC in conjunction with a battery charger IC, in this case the LTC4053, to charge a battery from the USB cable.

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

SEMITEC 103JT-025

Abstract: 103JT-025 uSIM sclk 120v battery charger Schematic Diagram ufx5 debouncing timer usim card chips
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9 V Dynamically Adjustable to 0.87 V/1.1 V/1.2 V • DC to DC step Down 1.2 A, 1.2 V (Dynamically Adjustable to 1.0 V/1.1 V/1.3 V) or 1.75 V (Dynamically Adjustable 1.65 V/1.70 V/1.80 V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70 V/1.75 V/1.85 V) or

Contextual Info: SM405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V) -0 Id (A) rDS(on) (ß ) 0.125 9 VG S= -4 .5 V ± 1 .8 0.160 @ V qs = -2 .5 V ± 1 .6 0.210 @ V qs = -1 .8 v ± 1 .4 A V P V* SOT-363 SC-70 (6-LEADS) Marking Code OB