185MA Search Results

Contextual Info: Advanced Information KM74B4006 1M x 4 Syncronous SRAM 1,048,576 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time : 10, 12, 15ns Max. • Low Power Dissipation KM74B4006-10 : 190mA (Max.) KM74B4006-12 : 185mA (Max.)

Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching

Contextual Info: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8:185mA (Max.)

Contextual Info: PART NUMBER: 185MABA01KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1 8 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 185MABA05KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1 8 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 185MABA03KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1 8 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

KM68B257AJ-8

Abstract: A26cl
Contextual Info: PRELIMINARY KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8: 185mA (max.)

Contextual Info: PRELIMINARY KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)

Contextual Info: ADVANCED INFORMATION CMOS SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2518T330M Features Item Summary 33 H(±20%), 185mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features   +21dBm, <4.0%EVM, 185mA atVCC =3.3V NC VC1 NC 13 1st     2nd 12 RFOUT/ VC2 11 RF OUT 10 RF OUT 9 NC Input Match 28dB Typical Small Signal Gain 50 Input and Interstage Matching

Contextual Info: KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 1 0 ,12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)

Contextual Info: Advanced Information KM74B4006 1M X 4 Syncronous SRAM 1,048,576 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time : 10,12, 15ns Max. • Low Power Dissipation KM74B4006-10: 190mA (Max.) KM74B4006-12 : 185mA (Max.)

Contextual Info: PRELIMINARY KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM69B257AJ-8: 185mA (max.)

Contextual Info: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +85°C Motor Run Capacitors radial leaded box Part Number: 185MABA04KG# This part is RoHS compliant Electrical Specifications Capacitance: 1.8uF Tolerance: -10 %,+10 %

Contextual Info: KM64B258A BiCMOS SRAM 65,536 W O R D x4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM64B4002J-10 : 190mA(Max.) KM64B4002J-12 : 185mA(Max.)

Contextual Info: PART NUMBER: 185MABA04KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1 8 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

wp1l

Contextual Info: jm Jw N K K CMOS SRAM 1M-BIT 256K X 4 N341028 • Features • CMOS SRAM organized as 262,144 X 4bits • Single +5.0V(± 10%)Power Supply • High Speed Access time : 15/17/20/25ns • Low power operation N341028 (Standard type) Active : 185mA (max.) Standby : 55mA (max.)

Contextual Info: jm Æ r NKK CMOS SRAM FMBMMIMA1Y 1M-BIT 128K X 8 N341026 • Features • C M O S S R A M organized as 131,072 X 8bits • Single+5.0V(±10%) Power Supply • High Speed Access time : 15/17/20/25ns • Low power operation N341026 (Standard type) Active : 185mA (max.)

ofdm amplifier

Abstract: RF5125
Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features „ „ +21dBm, <4.0%EVM, 185mA atVCC =3.3V NC VC1 NC 13 1st „ „ „ „ 2nd 12 RFOUT/ VC2 11 RF OUT 10 RF OUT 9 NC Input Match 28dB Typical Small Signal Gain 50Ω Input and Interstage Matching

RF5112

Abstract: Gan hemt transistor x band
Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features „ „ +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC 13 1st „ „ „ „ 2nd 12 RFOUT/ VC2 11 RF OUT 10 RF OUT 9 NC Input Match +21dBm, <4.0%EVM, 185mA atVCC =3.3V RF IN 3 NC 4 Bias 28dB Typical Small Signal Gain

Contextual Info: LOW VOLTAGE RECTIFIERS 2,000nS RECOVERY AXIAL LEADED HERMETICALLY SEALED MIL-S-19500/420 1N5550 1N5551 1N5552 1N5553 VRWM = 200-1000V , = 5 OA / I 1N5554 JANTX JANTXV RR 1N5550 thru 1N5554 A B C D .185Max 4.7 .180(4.57) Max .115(2.92) Min .042(1.07) Max

KM681002A

Abstract: KM681002A-12 KM681002A-15 KM681002A-20
Contextual Info: ADVANCED INFORMATION CM O S SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)