18AF Search Results

446H

Abstract: IR 1836 3v 30E2H 18AF 3310h 3310H transistor 3A0F bridge marking Z6 SDH 209 PM5363
Contextual Info: PM5363 TUPP+622 TUPP+622 DATASHEET PMC-1981421 ISSUE 4 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES PM5363 TUPP+622 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES DATASHEET RELEASED ISSUE 4: JULY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

oq 0051

Abstract: 28D7 16C622 AN729 0CB1
Contextual Info: LinBsApNt.book Page 1 Wednesday, October 11, 2000 11:32 AM AN729 LIN Protocol Implementation Using PICmicro MCUs Authors: ever, instead of having a clock line, each byte is marked via start and stop bits and the individual bits are asynchronously timed like RS232.

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DF220

Abstract: df221-601 XG series CAP murata new year date code 40KHz ultrasonic resonance 150M DF22D-Q0 IPA 300T marking code murata label 152GMV
Contextual Info: Pl/10 Spec.No. J E E F 2 4 3 Q 4 —0 Q 0 6 O F E E D - T H R U T YP E C E R A MI C C A P A C I T O R D F 2 2 0 /D F 2 2 1 SERIES GENERAL S P E C I F I C A T I O N 1. S c o p e This specification applies to Feed-Thm Type Ceramic Capacitor. 2. P a r t N u m b e r i n g

18AF

Abstract: BUT18AF BUT18F UT18 BUT18
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F 18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control

T-CON Schematic

Abstract: IC ADC 0804 -4-bit pin details t-con lvds schematic diagram TCON lcd sharp DELTA 18AF SCHEMATIC scaler mcu lvds diagram Sharp TCON ADE3800 TFT LCD timing controller T-con DUAL PIXEL ade3800xl ic
Contextual Info: ADE3800 Analog LCD Display Engine for XGA and SXGA Resolutions with Embedded LVDS and RSDS Transmitters • Low power 0.15 µm process technology ■ Low cost 100-pin LQFP and 128-pin LQFP packages ■ Lead-free versions available in 2005. Feature Overview

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

smd marking STPA

Abstract: smd code STPA pn 150bh RS7310 DELTA 18AF D1 SMD CODE MARKING SMD transistor n36 RS7210 18AF smd diode marking A38
Contextual Info: Multi-Service Access Device For Channelized Interfaces Telecom Standard Product Data Sheet Production PM7390 S/UNI-MACH48 MULTI-SERVICE ACCESS DEVICE FOR CHANNELIZED INTERFACES S/UNI- R MACH48 Data Sheet Proprietary and Confidential Production Issue 4: December 2001

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

CORE i3 ARCHITECTURE

Abstract: Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7
Contextual Info: MF855-03a CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63000 Core CPU Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

D4721

Abstract: D4184 cd1619
Contextual Info: 1 Datasheet 9EF 2  2!F7"EFF# $  9%&%6 1 1 '"1  74E834D13488C4ED19AA51/12019CED!1

a1f45

Abstract: C446
Contextual Info: 1 Datasheet 9EF 2  2!F7"EFF#  9$%&5A$ 1 1 'F "  1 1 1 E

ADAM02

Abstract: Wireless Electronic Notice Board 2012 project abstract D8A1 schematic diagram usb flash sandisk 6B40 3A81 V850ES/JJ2 E510 pc controlled robot main project abstract RS-232 to SPI converter MAX232
Contextual Info: Application Note DMA Transfers to SD Card and External SRAM Document no. U19133EU1V0AN00 February 2008. NEC Electronics America, Inc. All rights reserved. DMA Transfers The information in this document is current as of February 2008. The information is subject to change without notice.

s29gl032m10tair

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics

S70GL01GN00

Abstract: S29GL01GP S29GL512N
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP

BUT18AF

Abstract: but18a MBB077 BUT13 BUT18
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT18F; 18AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector

SA293

Abstract: SA273 988000
Contextual Info: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

L256ML

Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations