18H3600 Search Results

5STP18H4200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM = 4200 V ITAVM = 2075 A ITRMS = 3260 A ITSM = 32000 A VT0 = 0.96 V rT = 0.285 mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5stp18h4200

Abstract: 18H3600
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications