18LBS. Search Results

Contextual Info: Si GEC PLE SS EY SEMICONDUCTORS QS4325-3.3 GP250MHB06S POWERUNE N-CHANNEL IGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS 600V ^C E S v C E « a t 2.1V 250A ^ C (C O N T )

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S DS4324-3.1 GP500LSS06S p o w e r l in e n -c h a n n e l ig b t m o d u l e TYPICAL KEY PARAMETERS VCES 600V VCE ial 2.1V W ond 500A APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

Contextual Info: M ITEL GP500LSS06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4324 - 4.3 The G P 500LS S 06S is a single sw itch 600V, robust n c h a n n e l e n h a n c e m e n t m od e in s u la te d g a te b ip o la r tran sistor IGBT . Designed fo r low p ow er loss, the m odule

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

GP600FHB16S

Contextual Info: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

1200ap

Abstract: kw MHz transistor module GEC 41 GP600DHB16S lc 6231 GEC Plessey Semiconductors DS433
Contextual Info: S i GEC PL E S SE Y NOVEM BER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS.

Contextual Info: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.

GP150MHB16S

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4545-2.5 GP600FHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS. 6 0 0 A

PLESSEY CLA

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

Contextual Info: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

GP600FHB16S

Abstract: DS4545
Contextual Info: GP600FHB16S @ M IT E L Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4545 - 2. DS4545 - 2.7 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE(sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.

Contextual Info: M ITEL S E M IC O N D U C T O R GP400LSS12S Powerline N-Channel IGBT Module Supersedes July 1998 version, DS4137 - 7.3 DS4137 - 7.4 Decem ber 1998 The G P 400LS S 12S is a single sw itch 1200 volt, robust n channel e n h a n ce m e n t m ode insulated gate b ip ola r

Contextual Info: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

Contextual Info: JULY 1996 GP300LSS16S ADVANCE ENGINEERING DATA DS4136-5.2 GP300LSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A IC(CONT) 600A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP600DHB16S ADVANCE ENGINEERING DATA DS4335-4.2 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 600A IC(CONT) 1200A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

Contextual Info: GP1200FSS16S M M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

Contextual Info: JULY 1996 GP1000DHB06S ADVANCE ENGINEERING DATA DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 1000A IC(CONT) 2000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.