DS433 Search Results

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

DG858DW

Abstract: thyristor drive dc motor speed control 300A thyristor gate control circuit Gate Turn-off 100A 750V HS- 2000V induction heat circuit DG858DW45 DS4334-4 2S300
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS 3000A ITCM 4500V VDRM 1100A IT AV 750V/µs dVD/dt 300A/µs dIT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

DG858DW45

Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS 3000A ITCM 4500V VDRM 1100A IT AV 750V/µs dVD/dt 300A/µs dIT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

16450 UART

Abstract: National Semiconductor PC16550D UART DS433 datasheet of 16450 UART uart vhdl IPIF asynchronous PC16550D vhdl 8 bit parity generator code
Contextual Info: OPB 16450 UART DS433 August 18, 2004 Product Specification Introduction LogiCORE Facts This document provides the specification for the OPB Universal Asynchronous Receiver/Transmitter UART Intellectual Property (IP). The UART described in this document has been designed

Contextual Info: DS433 Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 33 Load Current Max. (A)90m Drop-Out Volt Max. P(D) Max. (W)3.0 Nom. Supp (V)24 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)100 Package StyleModule

1200ap

Abstract: kw MHz transistor module GEC 41 GP600DHB16S lc 6231 GEC Plessey Semiconductors DS433
Contextual Info: S i GEC PL E S SE Y NOVEM BER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS.

Contextual Info: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.

PLESSEY CLA

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V 1100A IT AV dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

Contextual Info: Si GEC PLESSEY ADVANCE ENGINEERING DATA S E M I C O N D U C T O R S DS4334-3.1 DG858DW45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 3000A 4500V 1100 A 750V/HS 300A/|iS ^TCM V ■ Uninterruptable Power Supplies

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

Contextual Info: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •

Contextual Info: JULY 1996 GP600DHB16S ADVANCE ENGINEERING DATA DS4335-4.2 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 600A IC(CONT) 1200A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.

AN5190

Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ

Contextual Info: GP1200FSS16S M M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.

GTO 100A 750V

Abstract: GTO gate drive unit dc-dc GTO 100A and 750V Gate Turn-off 100A 750V GTO 100A and 750V GTO 750V 100A GTO thyristor 100A, 2000V DG858DW45 DS4334-4 dvd motor
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 1100A dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

DG858DW45

Abstract: DG858DW
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor DS4334-5 July 2014 LN31737 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1100A dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses

dc servo motor control

Abstract: DS4338
Contextual Info: GP800DHB12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4338 - 4.2 DS4338 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V 'c E sa„ 2.8V 'c c o n t 800A 'c ,P K , 1600A tr 190ns t. 840ns APPLICATIONS

Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V CE,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS. 6 0 0 A

ns 4150 da

Contextual Info: GP600DHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR S upersedes March 1997 version, DS4335 - 5. DS4335 - 5.7 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE(sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.

half bridge circuit diagram

Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Contextual Info: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

Contextual Info: GEC PLESS EY S E M I C O N D U C T O R S DS4339-4.2 GP200MHB12S POWERUNE N-CHANNELIGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS v CES 1200V V* CE sat 2.8V 200A S conti