a12216
Abstract: sd 6109
Contextual Info: Ordering number: ENN6109A Monolithic Digital IC LB1987,1987D, 1987M, 1987H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview 3147B-DIP28H The LB 1987, LB1987D, 1987M, and LB1987H are optimal capstan motor drivers for use in VCR sets. Functions
|
OCR Scan
|
ENN6109A
LB1987
1987D,
1987M,
1987H
3147B-DIP28H
LB1987D,
LB1987M,
LB1987H
3129-MFP36S-LF
a12216
sd 6109
|
PDF
|
a12216
Abstract: A12212 A12208 A12-212 A12220 a1221 DIP28H LB1987 LB1987D LB1987H
Contextual Info: Ordering number : ENN6109A Monolithic Digital IC LB1987, 1987D, 1987M, 1987H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview 3147B-DIP28H [LB1987D] The LB1987, LB1987D, 1987M, and LB1987H are optimal capstan motor drivers for use in VCR sets.
|
Original
|
ENN6109A
LB1987,
1987D,
1987M,
1987H
3147B-DIP28H
LB1987D]
LB1987D,
LB1987M,
a12216
A12212
A12208
A12-212
A12220
a1221
DIP28H
LB1987
LB1987D
LB1987H
|
PDF
|
VW-1 H
Abstract: HSOP28H DIP28H LB1987 LB1987M Y136 fg 315 LB1987D SH 522 B8444
Contextual Info: 注文コードNo.N6 1 0 9 6109 42899 LB1987/1987D 1987M/1987H 新 モノリシックディジタル集積回路 VTRキャプスタン用 3相ブラシレスモータドライバ LB1987, 1898D, 1987M, 1987Hは据置VTR用キャプスタンモータドライバに最適です。
|
Original
|
LB1987/1987D
LB1987M/1987H
LB1987,
1898D,
1987M,
1987HVTR
3147B
LB1987D]
LB1987]
DIP28H
VW-1 H
HSOP28H
DIP28H
LB1987
LB1987M
Y136
fg 315
LB1987D
SH 522
B8444
|
PDF
|
a12216
Abstract: A12212 A12208 A12220 SE153 a12-212 SF173 A12207 a1221 DIP28H
Contextual Info: Ordering number : ENN6109A Monolithic Digital IC LB1987, 1987D, 1987M, 1987H Three-Phase Brushless Motor Driver for VCR Capstan Motors 3147B-DIP28H [LB1987D] The LB1987, LB1987D, 1987M, and LB1987H are optimal capstan motor drivers for use in VCR sets. R1.7
|
Original
|
ENN6109A
LB1987,
1987D,
1987M,
1987H
3147B-DIP28H
LB1987D]
LB1987D,
LB1987M,
a12216
A12212
A12208
A12220
SE153
a12-212
SF173
A12207
a1221
DIP28H
|
PDF
|
marking IAY
Abstract: TC-2126
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN 1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters 2.8 ±0.2 O—W V 0 .65:8;U 1.5 R t = 2 2 k£2 Ri R2 = 4 7 kü
|
OCR Scan
|
1987M
marking IAY
TC-2126
|
PDF
|
UPA1400H
Abstract: NEC UPA1400H PA1458H IC-6342 PA145 C28W 13X26X4
Contextual Info: NEC ' < r7 y = 7 > ì> 7. ? Co m p o und P o w e r T ra n sisto r / f ë i â j > ¿ P 1 A 4 5 8 H h > » # i X Ü ffl N PN Silicon Epitaxial T ran sisto r Low Speed S w itching Darlington) Industrial Use 7 °|J > ? !K > , • 9 4 y ° y -i 9 • 7 T ? x Ì 1
|
OCR Scan
|
PA1458H
13X26X4
UPA1400H
NEC UPA1400H
PA1458H
IC-6342
PA145
C28W
|
PDF
|
TC-3843
Abstract: tc3843 2SK735 3843
Contextual Info: NEC mN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK735 The 2SK735 is N-channel MOS Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies, D C -D C converters. FEATURES in m illim eters inches
|
OCR Scan
|
2SK735
1987M
TC-3843
tc3843
3843
|
PDF
|
2SK812
Abstract: 2sk8
Contextual Info: NEC F n -c h a n n e l m o s f ie l d e ffe c t p o w e r t r a n s is t o r ELECTRON DEVICE DESCRIPTION Ï 5 Ï The 2SK812 is N-Channel MOS Field E ffect Power Transistor designed fo r solenoid, m otor and lamp driver. FEATURES • b 412 S K . 8 1 2 PACKAGE D IM EN SIO N S
|
OCR Scan
|
2SK812
2SK812
1987M
2sk8
|
PDF
|
2SK785
Abstract: TC3822 NEC 701
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK785 The 2SK785 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES in m illim eters inches • Suitable fo r switching power supplies, actuater controls, and
|
OCR Scan
|
2SK785
2SK785
RS39726
oIa522an4192,
TC3822
NEC 701
|
PDF
|
BT 815 transistor
Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
Contextual Info: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m
|
OCR Scan
|
2SA1625
PWS300
SC-43B
BT 815 transistor
Transistor BFR 96
pt 4115
2SA1625
PA33
T108
X108
ih 0565 r
EI 33
LX108
|
PDF
|
2SK876
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK876 The 2SK876 is N-channel MOS Field Effect Power Transistor PACKAGE DIM EN SIO N S designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches
|
OCR Scan
|
2SK876
2SK876
1987M
|
PDF
|
H100I
Abstract: marking IAY
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z
|
OCR Scan
|
1987M
H100I
marking IAY
|
PDF
|
ic ir 2103
Abstract: 2SC4175 MARKING B2 TRANSISTOR MARKING 3D
Contextual Info: DATA SHEET SILICON TRANSISTOR - - 2SC4175 'I „ • »' HIGH SPEED SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURE PACKAGE DIMENSIONS • in m illim eters High Speed : t stg = 20 ns M A X . 2.1 + 0.1 1.25 + 0.1 ABSOLUTE MAXIM UM RATINGS M axim um Voltages and Current T a = 25 °C
|
OCR Scan
|
2SC4175
1987M
ic ir 2103
2SC4175
MARKING B2
TRANSISTOR MARKING 3D
|
PDF
|
L4Z marking
Abstract: marking M61 marking M63
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2
|
OCR Scan
|
1987M
L4Z marking
marking M61
marking M63
|
PDF
|
|
|
2SK830
Abstract: 2SK83
Contextual Info: SEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK830 DESCRIPTION The 2SK830 is N-channel MOS Field Effect Power PACKAGE DIMENSIONS Transistor designed for switching power supplies DC-DC converters. FEATURES • in m illim eters inches 15.7 M A X .
|
OCR Scan
|
2SK830
2SK830
-V-90
1987M
2SK83
|
PDF
|
pu45
Abstract: 2SK821
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR EIECTRON DEVICE 2SK821 DESCRIPTION The 2SK821 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r sw itching power supplies, DC-DC converters. FEATURES In m illim e te rs inches
|
OCR Scan
|
2SK821
2SK821
1987M
pu45
|
PDF
|
MPT100
Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &
|
OCR Scan
|
|
PDF
|
ci 3060 pt
Abstract: 2SA1627 transistor 2SA1627 2SA162
Contextual Info: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^
|
OCR Scan
|
2SA1627
PWS10
ci 3060 pt
2SA1627
transistor 2SA1627
2SA162
|
PDF
|
lO552
Abstract: 1T108 T460 0766125 2AV9
Contextual Info: NEC I ï f / \ f C o m p o u n d T ra n sisto r 7 CE1A3Q î& Î/ t r t S U M CE1A3Q ' i t — K, 1 L t n u ? ? 3 w ÿ 9 • ^ $ -y 9 F^ ic y > # F '7 ^ i £ I T * e n m m t - Ÿ ' Z f t M L f z , • -<— H igh h FE Î Ê t / i l ^ Ü F 7 > y ' X ^ T",
|
OCR Scan
|
CycleS50
lO552
1T108
T460
0766125
2AV9
|
PDF
|
2SK833
Abstract: TC-3851
Contextual Info: NEC N-CHAIMNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK833 ELECTRON DEVICE DESCRIPTION The 2SK833 is N-channei MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES in m illim eters inches »Suitable for switching power supplies, actuater controls,
|
OCR Scan
|
2SK833
1987M
TC-3851
|
PDF
|
2SK871
Abstract: 2SK87 2sk8
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION I 2SK871 The 2SK871 is N-channel MOS Field E ffect Power Transis PACKAGE DIMENSIONS to r designed fo r switching powersupplies DC-DC converters. FEATURES in m illim eters inches
|
OCR Scan
|
2SK871
2SK871
1987M
2SK87
2sk8
|
PDF
|
UPA1400H
Abstract: NEC CSJ 13X26X4 LZ02 IC-6340
Contextual Info: NEC j r / v r x Com pound * 7 - Po w e r T r a n s is t o r A ¿ ¿ P N P N X b ° ^ + '> 7 'J ls l& z s U □ > h i& m g . y - A 1 4 5 6 H ? 7 l " C v > t > m m x i f f l NPN Silicon Epitaxial Transistor Low Speed Switching Darlington) Industrial Use 7° 'J y 9 • 9 -i 7 °7 -i 9 • 7 T 9 X i 'J • E C R & i f
|
OCR Scan
|
PA1456H
13X26X4
6iii51Ã
UPA1400H
NEC CSJ
LZ02
IC-6340
|
PDF
|
2SA1608
Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o
|
OCR Scan
|
2SC4173
2SA1608
2SC4173
|
PDF
|
2SK872
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK872 The 2S K 87 2 is N-channel MOS Field E ffect Power Transistor P A C K A G E D IM E N S IO N S designed fo r switching power supplies, DC-DC converters. FEATURES •
|
OCR Scan
|
2SK872
2SK872
1987M
|
PDF
|
