1991F Search Results

LTQD

Abstract: LTC1991 op amp marking P3 LT1991 LT1991ACDD LT1991CDD LT1991IDD LT1991AIDD#PBF
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES DESCRIPTION n The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no

LT1991AIDD#PBF

Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES DESCRIPTION Pin Configurable as a Difference Amplifier, Inverting and Noninverting Amplifier n Difference Amplifier Gain Range 1 to 13 CMRR >75dB n Noninverting Amplifier Gain Range 0.07 to 14 n Inverting Amplifier

LT1991

Abstract: LT1991ACDD LT1991AIDD LT1991CDD LT1991CMS LT1991IDD LT1991IMS
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier U FEATURES DESCRIPTIO • The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no

CMS410-7

Abstract: MAX15112
Contextual Info: CMS409, CMS410 8 MEGABYTE DRAM MEMORY CARDS SMNS40ÔA-JULY 1991-flEVISED JANUARY 1993 Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARO (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) Enhanced Page Mode Operation CMS409 - 4M x 18/1RAS/2CAS

s037a

Abstract: h58n
Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037B-JANUARY1991-REVISED FEBRUARY 1993 JD PACKAGE TOP VIEW • I * Military Operating Temperature Range . . . - 55°C to 125°C I * Processed to MIL-STD-833, Class B I • DRAM: 262 144 Words x 4 Bits SAM: 512 Words x 4 Bits

Contextual Info: TMS417400 4194 304-WDRD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS740A-JULY 1991-REVISED DECEMBER 1992 This data sheet is applicable to all TMS417400s symbolized with Revision “A " and subsequent revisions as described on page 23. V CC : 1 DQ1 c 2 DQ2 c 3

TMS44165

Contextual Info: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166A-SEPTEMBER1991-REVISED DECEMBER 1992 Organization . . . 262 144 x 16 Single 5-V Supply ±10% Tolerance Performance Ranges: A C C E S S A C C E S S A C C E S S R EA D OR

Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES n n n n n n n n n n n n DESCRIPTION Pin Configurable as a Difference Amplifier, Inverting and Noninverting Amplifier Difference Amplifier Gain Range 1 to 13 CMRR >75dB Noninverting Amplifier Gain Range 0.07 to 14

op amp marking P3

Abstract: M3 MSOP
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier U FEATURES DESCRIPTIO • The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no

BQ2001

Contextual Info: fe il Preliminary BENCHMARQ Energy Management Unit EMU Features General Description >- Microprocessor peripheral for battery management and related functions T he BiCMOS bq2001 E n erg y Management U nit (EMU) is a lowpower m icroprocessor p erip h e ra l

TCA 255

Abstract: BQ2001 27217
Contextual Info: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser­

LT1991

Abstract: LT1991ACDD LT1991AIDD LT1991CDD LT1991CMS LT1991IDD LT1991IMS M3 marking
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier U FEATURES DESCRIPTIO • The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no

LTQD

Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES DESCRIPTION • The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no

LTC1991

Abstract: op amp marking P3 led 3watt VOS TRIM op amp LT1991 LT1991ACDD LT1991CDD LT1991IDD
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Pin Configurable as a Difference Amplifier, Inverting and Noninverting Amplifier Difference Amplifier Gain Range 1 to 13 CMRR >75dB

Contextual Info: TM4100EAD9 4 194 304 BY 9-BIT DYNAMIC RAM MODULE SM M S 4 1 9 A -N 0 V E M B E R 1991-REVISED JA N U A R Y 1993 Organization . . . 4 194 304 x 9 S IN G L E IN-LINE M O D U L E t TO P VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single In-Line Memory Module

BQ2001

Contextual Info: ht bq2001 BENCHM ARQ Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Manage­ ment Unit (EMU) is a low-power microprocessor peripheral providing

LTQD

Abstract: Micropower 100A 53450K
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Pin Configurable as a Difference Amplifier, Inverting and Noninverting Amplifier Difference Amplifier Gain Range 1 to 13 CMRR >75dB

sigma elevator

Abstract: 80386 microprocessor interface keyboard S-10 S-17 S-20 80486 microprocessor 80286 schematic 80286 mouse diagram wii remote tk 851
Contextual Info: Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Application Considerations for Solid State Controls” Publication SGI-1.1 describes some important differences between solid state equipment and hard-wired

LT1990

Abstract: LT1991 LT1991ACMS LT1991AIMS LT1991CMS LT1991IMS
Contextual Info: LT1991 Precision, 100µA Gain Selectable Amplifier U FEATURES DESCRIPTIO • The LT 1991 combines a precision operational amplifier with eight precision resistors to form a one-chip solution for accurately amplifying voltages. Gains from –13 to 14 with a gain accuracy of 0.04% can be achieved using no