1998N Search Results

Contextual Info: SIEMENS PROFET BTS650P Smart Highside High Current Power Switch O vervoltage protection Vbb AZ 62 V O utput clamp O perating voltage VÒN(CL) 42 V Vbb(on) co V O n-state resistance RON Load current (ISO) /L(ISO) Short circuit current limitation C urrent sense ratio

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT HPC3206GR 50dB AGC AMP + VIDEO AMP DESCRIPTION The ¿ PC3206GR is Silicon monolithic 1C designed for Digital DBS and Digital CATV receivers. This 1C consists of a two stage gain control amplifier and a wideband linear video amplifier.

PROFET-. Semiconductor Group

Abstract: Q67060 650P BTS650P Q67060-S6308-A2 INV55
Contextual Info: S IE M E N S PR O FET BTS650P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Sum m ary O vervoltage protection Output clamp Operating voltage On-state resistance Overload protection Current limitation

d44401

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.

intel 82595

Abstract: RJ45 cable t14c
Contextual Info: 82595FX ISA BUS HIGH INTEGRATION ETHERNET CONTROLLER • Optimal Integration for Lowest Cost Solution — Glueless 8-Bit/16-Bit ISA Bus Interface — Provides Fully 802.3 Compliant AUI and TPE Serial Interface — Local SRAM Support up to 64 Kbytes — integrated ISA Bus Data

Contextual Info: DATA SHEET_ |iPC2781GR BIPOLAR ANALOG INTEGRATED CIRCUIT DESCRIPTION The /XPC2781GR is Silicon monolithic IC designed for use as IQ demodulator in digital communication systems. This IC consists of AGC amplifier, dual balanced mixers DBM , oscillator, quadrature phase shifter and I & Q output

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2795GV GENERAL PURPOSE L-BAND DOWN CONVERTER DESCRIPTION The /¿PC 2795G V is Silicon monolithic 1C designed for L-band down converter. This 1C consists of double balanced mixer, local oscillator, local oscillation buffer amplifier, IF buffer amplifier, and voltage regulator.

SMD 5962-98509

Abstract: XQ4028EX4HQ240N SMD H24 smd marking p69 qml-38535 MS-029-GA SMD MARKING CODE w19 SMD MARKING CODE N1 XQ4028EX-4CB228B OP234
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET 35 36 37 38 39 15 16 17 18 19 REV SHEET REV STATUS OF SHEETS 20 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES O F T H E DEPARTMENT OF DEFENSE 22

PROFET-. Semiconductor Group

Abstract: BTS650P E3180 smd code 842
Contextual Info: PROFET BTS650P Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Overload protection • Current limitation

smd transistor marking p69

Abstract: marking code p52 SMD smd marking m4 SMD 5962-98509 smd transistor device marking p18 marking ae21 SMD smd A18I SMD transistor MARKING CODE g23 smd marking p69 marking code p42 SMD
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET 35 36 37 38 39 15 16 17 18 19 REV SHEET 20 REV STATUS OF SHEETS REV PMIC N/A PREPARED BY Kenneth Rice STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

nec 358 amplifier

Abstract: NEC 426 nec 1678
Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT /¿PG155TB L-BAND SPDT SWITCH DESCRIPTION The ¿iPG155TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.

DOT MATRIX PRINTER SERVICE MANUAL

Abstract: sc1236 SC-1236 4247-A00 IBM 6400 IBM 4230 4312-002 dot matrix printer simplex 4002 69G7336
Contextual Info: IBM 4400 Thermal Printer Current List Prices without sales tax. Prices are subject to change without further notice Warranty Mod/ Type Feat 12 months, on-site P/N List price List price SEK Euro Description IBM 4400 Thermal Printer Serial&Parallel port, 8MB DRAM & 4MB Flash, ASCII, Code V & IGP.

mt 1389 de ic

Abstract: 3as1
Contextual Info: 82596CA HIGH-PERFORMANCE 32-BIT LOCAL AREA NETWORK COPROCESSOR • Performs Complete CSMA/CD Medium Access Control MAC Functions— Independently of CPU — IEEE 802.3 (EOC) Frame Delimiting ■ Supports Industry Standard LANs — IEEE TYPE 10BASE-T, IEEE TYPE 10BASE5 (Ethernet*),

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high