19FEB02 Search Results
19FEB02 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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sfernice
Abstract: SH25 104M SH10 SH50 Vishay Sfernice 10 watt p 150 54 VISHAY 12W
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19-Feb-02 sfernice SH25 104M SH10 SH50 Vishay Sfernice 10 watt p 150 54 VISHAY 12W | |
SH25Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall features for industrial use under |
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1000h 19-Feb-02 SH25 | |
E54214
Abstract: GBLA005 GBLA10
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GBLA005 GBLA10 E54214 x12mm) 19-Feb-02 E54214 GBLA10 | |
GBPC1005
Abstract: GBPC110
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GBPC1005 GBPC110 E54214 19-Feb-02 GBPC110 | |
Contextual Info: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA) |
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11-Mar-11 | |
Contextual Info: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA) |
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18-Jul-08 | |
M11 markingContextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • SnPb contacts on Ni barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances |
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CECC40000 EN140400 19-Feb-02 M11 marking | |
plc wiring diagram
Abstract: RJ45 WIRING diagram 8072C BEET
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OCR Scan |
31MAR2000 0B10-0024-02 19FEB02 REV-ECD-08-024786 07DCT08 21FEB2002 0/RJ45 plc wiring diagram RJ45 WIRING diagram 8072C BEET | |
Fixed resistor
Abstract: 100MS SFERNICE RW 16
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19-Feb-02 Fixed resistor 100MS SFERNICE RW 16 | |
BYV26d 800
Abstract: BYV26D BYV26E DO-204AP
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BYV26D BYV26E DO-204AP MIL-S-19500 50mVp-p 19-Feb-02 BYV26d 800 BYV26E DO-204AP | |
ADS7846 driver
Abstract: KEYPAD 4 x 4 ADS7846 SA-1110 TSC2000 TSC2200 UCB1300 keypad keyboard driver sa11x0 SBAA070
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SBAA075 TSC2200 TSC2200 SA-1110 ADS7846 driver KEYPAD 4 x 4 ADS7846 TSC2000 UCB1300 keypad keyboard driver sa11x0 SBAA070 | |
020036Contextual Info: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1 |
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08-Apr-05 020036 | |
SDHC PINOUT
Abstract: SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF
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MC9S12UF32 64-pin 9S12UF32DGV1/D SDHC PINOUT SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF | |
300Ve
Abstract: VISHAY MARKING SG SG2403
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300Veff 150ppm/ 55/250/21S 19-Feb-02 300Ve VISHAY MARKING SG SG2403 | |
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Si4842DY
Abstract: NC1036 71482
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Si4842DY 0-to-10V 19-Feb-02 NC1036 71482 | |
Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
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vsD-db0048-0210 Ceramic RF Power and HV Capacitors dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data | |
GBL005
Abstract: GBL10 gbl 05
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GBL005 GBL10 E54214 MIL-STD-750, x12mm) 19-Feb-02 GBL10 gbl 05 | |
DBZ 012058Contextual Info: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1 |
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20KHz) 200pF 19-Feb-02 DBZ 012058 | |
GBLA10
Abstract: GBLA005
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GBLA005 GBLA10 E54214 50mVp-p 19-Feb-02 GBLA10 | |
G3SBA20
Abstract: G3SBA60 G3SBA80
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G3SBA20 G3SBA80 19-Feb-02 G3SBA60 G3SBA80 | |
Contextual Info: G4A thru G4J Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Hermetically sealed package |
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MIL-S-19500 MIL-STD-750, 50mVp 19-Feb-02 | |
4r85
Abstract: 020036
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20KHz) 200pF 19-Feb-02 4r85 020036 | |
sfernice
Abstract: Ni Cr Wire
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150ppm/ 19-Feb-02 sfernice Ni Cr Wire | |
GBPC6005
Abstract: GBPC610
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GBPC6005 GBPC610 E54214 50mVp-p 19-Feb-02 GBPC610 |