1N3211R Search Results

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 300 V IF = 15 A Features • High Surge Capability • Types from 50 V to 300 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

thyristor TAG 8506

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1N3208

Contextual Info: 1N3208 thru MOTOROLA 1N3212 M E D IU M -C U R R E N T RECTIFIERS 1 5 -A M P R E C T IF IE R S . fo r a p p lic a t io n s r e q u ir in g lo w fo r w a r d v o lta g e d ro p a n d rugged construction S IL IC O N D I F F U S E D - JU N C T IO N • High S u rg e H andling A bility