1N3208 Search Results

1N5332

Contextual Info: DIGITRON SEMICONDUCTORS 1N3208-1N3214, 1N5332 STANDARD RECOVERY RECTIFIERS MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +200°C TJ Operating junction temperature range -65 to +200°C RθJC Maximum thermal resistance 1.25°C/W junction to case

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

DIODE 1n1183

Contextual Info: VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: asi 1N3208 SILICON RECTIFIER DESCRIPTION: The 1N3208 is a General Purpose Rectifier Designed for Power Supply Applications. PACKAGE STYLE D O - 5 MAXIMUM RATINGS 50 V V rwM 15 A lo AVG @ Tc = 150 °C Tj -65 °C t o +175 °C T stg -65 °C t o +175 °C 0JC

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

a44e

Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­

in3208

Abstract: In3209 IN3212 IN3214 1N3210 1N3209 EDAL 4156 1N3208 1N3212
Contextual Info: EDAL INDUSTRIES INC M5E D 3GTS71b DOODB'iD EÔ3 IEDL HEX. 11/16“ ACROSS FLATS Of ' / 7 N .150” B. PIV See Tab I e Io 15 amps IS. 150 2sn _ AMPS 1.5 _V @ CASE 40 amps 25 1 ma PIV 25 10 ma PIV 150 STYLE_ D05 STAMP Edal P/N P/N ' PIV volts 1N3208 1N3209

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N2155

Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Contextual Info: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward

Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N3209

Abstract: 1N3208 1N3208R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 300 V IF = 15 A Features • High Surge Capability • Types from 50 V to 300 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N93A

Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

Contextual Info: 1N3208 Silicon Rectifier 7.88 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N3208 Online Store 1N3208 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

A41E

Abstract: A40A A40F A40E A41B IN3214 A40B A40F-M A41F A40D
Contextual Info: Silicon 1N3208.R IN3214.R Rectifiers A 4 0 F-M A 4 1 F — IVI G e n e r a l E l e c t r i c h a s d e s i g n e d t h i s 20 A m p e r e r e c t i f i e r s p e c i f i c a l l y f o r t h e n o r m a l i n d u s t r i a l a n d c o n s u m e r lo w a m b i e n t t e m p e r a t u r e a p p l i c a t i o n s . T h e d e s i g n u t i l i z e r s t h e s m a l l e s t p r a c t i c a l s iz e f o r t h e r a t i n g w i t h

IN3211

Abstract: 1N3208 in3208 1N3210 1N3212 IN321 1N3209 1N3213 1N3214 IN3214
Contextual Info: EDAL INDUSTRIES INC 3D*157],b DDDDB'iO BÛ3 • EDL MSE D O f' HEX. 11/16’ ACROSS FLATS / 7 B. PIV See Table Xo 15 @ amos 150 CASE IS 250 Vf 1.5 IT 1 ma @ PIV 25 10 ma & PIV 150 AMPS V @ STYLE D05 STAMP Edal P/N P/N 40 25 amps PIV volts 1N3208 1N3209 1N3210

A44E

Abstract: GE A40B 14C40 1N2481 A40E in3900 1N5332 1N1184 1N3899 A44M
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

Outline Dimensions

Contextual Info: Outline Dimensions Vishay Semiconductors DO-203AB DO-5 for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) Ø 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) Ø 4.10 (0.16) Ø 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX.

1N3208

Contextual Info: asii 1N3208 SILICON RECTIFIER DESCRIPTION: The 1N3208 is a General Purpose Rectifier Designed for Power Supply Applications. PACKAGE STYLE DO- 5 MAXIMUM RATINGS 50 V Vr w M 15 A Io AVG @ T e = 150 ° C Tj -65 0 C to +175 0 C Ts t g -65 0 C to +175 0 C 1.7 0 C/W

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.