1N5530B Search Results

Contextual Info: 1N5530B+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)1.0m Tolerance (%)5.0 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k Maximum Operating Temp (øC)175õ

MZ5520B

Abstract: MZ5523B MZ5530B Zener Voltage Regulator Diodes motorola MZ5524B MZ5525B MZ5529B zener motorola motorola zener diodes 1N5530B
Contextual Info: GENERAL DATA — 500 mW DO-35 GLASS Low Voltage Avalanche Passivated Silicon Oxide Zener Regulator Diodes Same as 1N5520B through 1N5530B except low noise test spec omitted. • Low Maximum Regulation Factor • Low Zener Impedance • Low Leakage Current

1N4099

Abstract: 1N5530B 1N6316 1N6317 1N6318 1N6319 1N6355 1N6326 JAN 1NS345 1n6329
Contextual Info: 1/2 Watt Zener Diodes Use Advantages I 1N6316 thru 1N6355 DO-35 Hard Glass Package Voidless / Tungsten-P lugs Low noise zener diodes with rugged voidless hard glass tungsten design. Able to replace less robust families like 1N4099 and 1N5530B. For use in hostile environments and applications where strength, thermal

Contextual Info: 1N5530B+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)1.0m Tolerance (%)5.0 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k Maximum Operating Temp (øC)175õ

Contextual Info: 1N5530B1+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)1.0m Tolerance (%)5 P(D) Max. (W)400m¥ Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k Maximum Operating Temp (øC)200’

1N6327 JAN

Abstract: BKC Semiconductors
Contextual Info: 1/2 Watt Zener Diodes Use Advantages I 1N6316 DO-35 Hard Glass Package thru 1N6355 Voidless / Tungsten-P lugs Low noise zener diodes with rugged voidless hard glass tungsten design. Able to replace less robust families like 1N4099 and 1N5530B. For use in hostile environments and applications where strength, thermal

DSAIH0002550

Contextual Info: Square ended SMD R v 1N6321US thru 1N6355US Applications 500 mWatt Voidless zeners Hard GlassTungsten MELF "D" Package i Low noise zener diodes with hard glass tungsten; non-rolling SMD design. Able to replace less robust families like 1N4099 and 1N5530B. For use in hostile environments and

Contextual Info: 1/2 Watt Zener Diodes Use Advantages I 1N6316 thru 1N6355 DO-35 Hard Glass Package Voidless IT ungsten-Plugs Low noise zener diodes with rugged voidless hard glass tungsten design. Able to replace less robust families like 1N4099 and 1N5530B. For use in hostile environments and applications where strength, thermal

Contextual Info: Square ended SMD 500 mWatt Voidless zeners 1N6321US thru 1N6355US Hard GlassTungsten MELF "D" Package nJ - Applications Low noise zener diodes with hard glass tungsten, non-rolling SMD design. Able to replace less robust families like1N4099and 1N5530B. Forusein hostile environments and

IN827 Temperature Compensated Zener

Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
Contextual Info: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65

ZENER 1N5 Datasheet

Abstract: 1N5 diode MLL5518B-1 1N5518 1N5518BUR-1 1N5546 1N5546BUR-1 DO-213AA JANTX1N4099UR-1 JANTXV1N4109CUR-1
Contextual Info: IN5518BUR-1 thru 1N5546BUR-1 or MLL5518B-1 thru MLL5546B-1 Low Voltage Surface Mount 500 mW Avalanche Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage regulators provides a selection from 3.3 to 33 volts in

1N55328-1

Abstract: mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 4551 Group 1N5546B-1
Contextual Info: The d o c u m e n t a t i o n and p r oc es s c o n v e r s i o n | me a s u r e s ne c e s s a r y to comp ly wi t h th is j r e vi si on shall be co m p l e t e d by 2 0 M a r c h 19 95 j j INCH-POUND ] 1-1 j | | - 1

815 zener

Abstract: 1N5988B 1N6006B 1N5994B 1N5995B
Contextual Info: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES

H546TAN01.0N

Contextual Info: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES

1N4705

Contextual Info: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES

motorola .5w zener diodes

Contextual Info: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

melf ZENER diode COLOR BAND

Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
Contextual Info: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,

Contextual Info: Low Noise Zener Diode Series 1N5518B-1 thru 1N5546B-1 Features • 1N5518-1 THRU 1N5546B-1 Available in JAN, JANTX and JANTXV PER MIL-PRF-19500/437 • Low Reverse Leakage Characteristics • Low Noise Cheracteristics • Double Plug Construction • Metallurgically Bonded

Contextual Info: Low Noise Zener Diode Series 1N5518B-1 thru 1N5546B-1 Features • 1N5518-1 THRU 1N5546B-1 Available in JAN, JANTX and JANTXV PER MIL-PRF-19500/437 • Low Reverse Leakage Characteristics • Low Noise Cheracteristics • Double Plug Construction • Metallurgically Bonded

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

MIL-prf-19500/437

Abstract: DO-213 1N5523B JANTX 1N5521B JANTXV 1N5531B JANTXV 1N5518-1 1N5518B 1N5518B-1 1N5519B 1N5520B
Contextual Info: Low Noise Zener Diode Series 1N5518B-1 thru 1N5546B-1 Features • 1N5518-1 THRU 1N5546B-1 Available in JAN, JANTX and JANTXV PER MIL-PRF-19500/437 • Low Reverse Leakage Characteristics • Low Noise Cheracteristics • Double Plug Construction • Metallurgically Bonded

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,