diode 5082-3080
Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1N5711,
1N5712,
1N5711
1N5712
5082-xxxx
5082-xxxx
5968-4304E
diode 5082-3080
5082-2804
5082-2835
diode 5082-2800 datasheet
in5712
1N5712 spice
IR 10e
5082-2810
F 5082
1N5711
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IR 10e
Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1N5711,
1N5712,
1N5711
1N5712
5082-XXXX
IR 10e
HP2.811
IN5712
diode 10e
1N5712
1N5712 spice
1N5711
RS-296-D
5082-2811
diode 5082-2800
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MIL-STD-750 METHOD 2036
Abstract: 5082-2817 HSMS-28XX diode hp 5082-2817 hp2817
Text: Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2817/18 Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity Outline 15 0.41 .016 0.36 (.014) 25.4 (1.00) MIN. tension for 30 minutes). The
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HSMS-28XX
5965-8845E
MIL-STD-750 METHOD 2036
5082-2817
diode hp 5082-2817
hp2817
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1N5712 spice
Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented
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1N5711
1N5711
1N5712
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712 spice
1N5711 spice
5082-2804
2800-Series
5082-2811
RS-296-D
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1N5 diode
Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
1N5 diode
1N5712
1N5719
1N5767
RS-296-D
5082-XXXX
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IN5712
Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
Text: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V
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1N5711,
1N5712,
1N5711
1N5712
5082-xxxx
5082-xxxx
IN5712
1N5711
1N5712
N5712
1N5712 spice
5082282
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diode t25 13 Go
Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in
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1N5711,
1N5712,
1N5712
5082-28xx
T25/1N57xx
1N57xx
5082-28xx/
diode t25 13 Go
1N5712
DIODE T25
1N5712 spice
DIODE T25 4
1N5711 spice
1n5711
5082-XXXX
1n5711 equivalent
AVAGO 5082-2811
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5082-XXXX
Abstract: 1N5712 1N5719 1N5767 RS-296-D 1N5 diode 30 MHz phase shifters 5082-3188
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3081 5082-3081 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
5082-XXXX
1N5712
1N5719
1N5767
RS-296-D
1N5 diode
30 MHz phase shifters
5082-3188
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1N5712
Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring
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5082-28xx
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N5712
5082-2800
5082-2826
RS-296-D
1N5711
5082-2080
5082-2805
1N5712 spice
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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hp 3077
Abstract: HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications
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5966-0941E
5967-5812E
hp 3077
HP 5082-3188
hp pin diode 5082-3081
hp 3080 diode
1N5767
IN5719
HP 5082-3379
diode hp 3039
1N5719
RS-296-D
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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diode hp 2835 schottky
Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
Text: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available
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1N5711
1N5712
5082-XXXX
5965-8844E
5966-0930E
diode hp 2835 schottky
diode hp 2900
5082-2912
5082-2800
HP2811
UHF schottky diode
5082-2970
diode hp 5082-2080
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5082-7650
Abstract: No abstract text available
Text: 0.43-INCH SEVEN SEGMENT DISPLAYS optoelectronics HIGH EFFICIENCY RED 5082-7650 SERIES RED 5082-7700 SERIES FEA TU RES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO N Industry-standard 0.43-inch displays High Efficiency Red and standard Red models Left or right decimal versions
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43-INCH
43-inch
082-775X
/5082-765X
C2022
C2021
5082-7650
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1N5767
Abstract: 5082-XXXX
Text: Thol mLUM PIN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harmonic Distortion Large Dynamic Range Low Series Resistance Low Capacitance Description/Applications These general purpose switching diodes are intended for low
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1N5719
1N5767
5965-9144E
5966-0941E
0017S77
5082-XXXX
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5082-2811
Abstract: No abstract text available
Text: warn H EW L E T T m¡3¡M PA CK A R D Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 niA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics
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1N5711
1N5712
5082-XXXX
5082-2811
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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diode hp 2835 schottky
Abstract: diode hp 2811 HP 5082-2900 IN5711 hp2811 hp 5082-2900 diode diode hp 2800 hp 5082-2800 diode diode hp 5082-2080 diode hp 2900
Text: m H EW LETT PA CK A RD S c h o ttk y B arrier D io d e s for G en eral P u rp ose A p p lic a tio n s Technical Data F eatures • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico S econ d Sw itching Speed • High Breakdow n Voltage Up to 70 V • M atched C haracteristics
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1N5711
1N5712
1N5711,
1N5712,
5967-5767E
diode hp 2835 schottky
diode hp 2811
HP 5082-2900
IN5711
hp2811
hp 5082-2900 diode
diode hp 2800
hp 5082-2800 diode
diode hp 5082-2080
diode hp 2900
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C2021
Abstract: C2017 C2023 5082-7653 C2020 100MS 5082-765X 5082-775X C2019 k C2020
Text: CîO 0.43-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONICS HIGH EFFICIENCY RED RED 5082-7650 SERIES 5082-7700 SERIES FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Industry-standard 0.43-inch displays High Efficiency Red and standard Red models Left or right decimal versions
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43-INCH
43-inch
C2021
082-775X
82-765X
C2022
C2021
C2017
C2023
5082-7653
C2020
100MS
5082-765X
5082-775X
C2019
k C2020
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Untitled
Abstract: No abstract text available
Text: 3bE D INDUSTRIAL ELECTRONIC • M7M43QE 00D33^S MIEE T - L i t '33 HOKUMS .43" 10.92mm LED DIGITAL DISPLAYS HI-EFFICIENCY RED • LR5082-7650 Series RED • LR5082-7700 Series FEATURES • • • • • • • • • • • Industry-standard 0.43 inch displays
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M7M43QE
00D33
LR5082-7650
LR5082-7700
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5082-2811
Abstract: No abstract text available
Text: What HEWLETT* mLliM PA C K A R D Schottky Barrier D iodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Sw itching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics
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1N5711
1N5712
5082-XXXX
5082-2811
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d823
Abstract: hp 3077 HP 5082-3081 5082-3039 HP 5082-3039 in5767 5082-XXXX hp 3077 diode
Text: Wfipl mHHM HEW LETT PACKARD PEN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harm onic D istortion Large Dynam ic Range Low S eries R esistance Low C apacitance Description/Applications These general purpose switching
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1N5719
1N5767
5966-0941E
5967-5812E
d823
hp 3077
HP 5082-3081
5082-3039
HP 5082-3039
in5767
5082-XXXX
hp 3077 diode
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Untitled
Abstract: No abstract text available
Text: W tiai H EW LETT PACKARD mHHM PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic D istortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low
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5966-0941E
5967-5812E
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5082-XXXX
Abstract: C2021 k C2020 y 050 k C2020 5082-7650 5082-7653 qt 5082 QT 5082-7651
Text: 0.43-INCH SEVEN SEGMENT DISPLAYS QUALITY TECHNOLOGIES HIGH EFFICIENCY RED RED 5082-7650 SERIES 5082-7700 SERIES FEATURES Industry-standard 0.43-inch displays High Efficiency Red and standard Red models Left or right decimal versions Common anode or common cathode
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PDF
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43-INCH
C2019
C2020
082-775X
082-765X
C2021
C2022
5082-XXXX
k C2020 y 050
k C2020
5082-7650
5082-7653
qt 5082
QT 5082-7651
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