1N5767 Search Results

diode 5082-3080

Abstract: 1N5767 5082-3080 1N5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

MT29KZZZ4D4RGFAK-5 W

Contextual Info: Microsemi PIN Diodes — Part Number i Microsemi I UPP9401 UM9401 UM9401F UM9401SM UM9402 UM9415 UM9415SM UM9301 UM9301SM 1N5767 1N5957 UM6601 UM6001 UM7301 UM7301SM UM7001 UM7001SM UM7501 UM6201 UM9441 UM7101 UM7101SM UM9601 UM9603 UM9605 UM9607 UPP1001 UM9701

Contextual Info: Whp\ HEWLETT mL'liâ PACKARD PIN Diodes Reliability Data 1N5767 5082-3080 5082-3168 5082-3188 D escription Applications For applications requiring component reliability estima­ tion, Hewlett-Packard provides reliability data for all families of devices. Data is initially com­

1N5767

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features

HP 5082-3081

Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Contextual Info: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE

1N5767

Abstract: IN5719 1nxxxx diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF

IN5767

Abstract: 1N5767
Contextual Info: PIN Diodes Reliability Data 1N5767 5082-3080 5082-3188 Description Applications For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to

Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

5082-3080

Abstract: 1N5767 1N5957SERIES diode 5082-3080 1N5957
Contextual Info: 1N5767 5082-3080 SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

diode 5082-3077

Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Contextual Info: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications

5082-3077

Abstract: 1N5767 2101 5082-3081 glass 1N5719 HPND-0001 HPND-0002 5082-3039 5082-3188
Contextual Info: RF Non-Surface Mount PIN Diodes Glass Axial Lead, Beam Lead, Chip, Stripline Part Number CT Max. pF 5082-3001 5082-3039 1N5719 5082-3077 5082-3188 5082-3080 1N5767 5082-3379 5082-3081 HPND-0001 HPND-0002 0.25 0.25 0.3 0.3 1 0.4 0.4 0.4 0.4 0.2 0.2 RS Max.

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

1N5767

Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers,

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

1N SERIES DIODE

Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

MA4P275S

Abstract: MA47111 ma47047 ma4p274ck MA4P303-30 MA4P202-134 MA47054 MA47420 ma4gp030 ma-47266
Contextual Info: PIN Diodes S E L E C T IO N G U ID E 1- 3 M O D EL N U M B ER M O D EL 1 N 5719. . . 1N5767 MA47041 MA47047 MA47053 . MA47054 MA47055 . MA47056 MA47057 . MA47058 MA47059 MA47100 MA47110 MA47111 MA47120 . MA47123 MA47200 MA47201 MA47202 MA47203 MA47204 MA47205

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

MA4PH301

Abstract: ma47111 MA4PH401 ma47266 1N5719 equivalent JANTX 1N5719 DIODES Cross Reference 1N5719 MA47120 MA47123
Contextual Info: Axial Lead PIN Diodes Features • GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES ■ HIGH VOLUME MANUFACTURING CAPABILITY ■ TAPE AND REEL PACKAGING

1N5 diode

Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Contextual Info: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control

Contextual Info: ALPHA I N » / SEMICONDUCTOR 33E » □ SÛS443 PÜQ0Û37 • ALP -T 07-15 Current Controlled Attenuator Diodes Features ■ ■ ■ ■ Large Resistance Range Hermetic Glass Package Low Harmonic Distortion Low Capacitance Types ■ DSB6419 Series Description

Contextual Info: Wm H E W L E T T ' mL'HMPACK ARD P IN Diodes fo r RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)