1N6095 Search Results

1N6095

Abstract: 1N6096 DO-203AA
Contextual Info: 25 Amp Schottky Rectifier 1N6095—1N6096 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads. 3. Stud is Cathode. A B C D E F G H J M N P 1,3 .423 -.600 .422 .075 -.163

1N6095

Contextual Info: 1N6095 1N6096 SD41 MOTOROLA S C H O T T K Y B A R R IE R R E C T IF IE R S S W IT C H M O D E P O W ER R E C T IF IE R S 2 5 and 3 0 A M P E R E S 3 0 to 4 5 V O L T S u s in g t h e S c h o t tk y B a r r ie r p r in c ip le w it h a p la t in u m b a r r ie r m e ta l

Contextual Info: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

1N6095

Abstract: 1n6096
Contextual Info: fit D if | fl3bflb0a OOO EBb l D J ~ 83 6 8 6 0 2 SOL ITRON D E V I C E S INC" 86 D 0 2361 D y - ¿>3 - / ? SCHOTTKY RECTIFIERS 1N6095 1N6096 Bolitron DEVICES, INC. POWER SCHOTTKY RECTIFIERS 25 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING LOW CAPACITANCE

1N6095

Abstract: 1n6096
Contextual Info: MCC 1N6095 thru 1N6096
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Barrier Rectifier 30 to 40 Volts Metal of siliconrectifier, majonty carrier conducton

1N6096

Abstract: 1N6095
Contextual Info: MCC 1N6095 thru 1N6096
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection

in6096

Abstract: UNITRODE 1N6095 1N6096
Contextual Info: POWER SCHOTTKY RECTIFIERS 1N6095 IN6096 25A, 30 and 40V FEATURES DESCRIPTION • • • • Unitrode’s series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high

1N6095

Contextual Info: 1N6095 thru 1N6096R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)

KH 2222

Abstract: diode 1n6095 sd41 jc 817
Contextual Info: 1N6095 1N6096 SD41 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using the Schottky Barrier principle with a platinum barrier metal. These state-ol-the-art

Contextual Info: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF = 25 A Features • High Surge Capability • Types from 30 V to 40V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

20FQ020

Abstract: 1N6095 20FQ IN6095 R/20FQ020
Contextual Info: |4flSSLf5E 0005077 1 4855452 INTERNATIONAL 5 5C R ECTIFIER 05077 D Data Sheet No. PD-2.033C INTERNATIONAL RECTIFIER T :o 3 I « R '/ 9 SOFQ, 1N6095 Gl 96 SERIES S7.5 and 30 Amp Sch o ttk y Power Rectifiers Major Ratings and Characteristics 2 0FQ 1N6095 & 96

32UNF-2A

Abstract: lN609 1N6095 SD41 1N6096 N6095 DS6127
Contextual Info: I 1N6095 1N6096 SD41 I SWITCHMODE POWER RECTIFIERS . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: I Guardring for Stress Low Forward 150°C Protection Voltage Operating Guaranteed

1N6095

Contextual Info: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: DIGITRON SEMICONDUCTORS 1N6095-1N6096 25 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 2.0°C/W junction to Case

Contextual Info: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

1N6095

Abstract: D227
Contextual Info: PD-2.331 International S Rectifier 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics lF AV Rectangular waveform V RRM 1N6095, 1N6096. Units 25* A 30/40* V ' fsm 6 ° Hz 400* A Vp ®80Apk,TJ-70°C

USD3030C

Contextual Info: Schottkv Rectifiers Microsemi Division SBR2520 SBT2520 SBR2525 1N6095 SBR2530 SBT2530 USD2555C SBR2535 1N6096 SBR2540 SBT2540 1N6391 1N6391 JAN1N6391 JAN1N6391 JANTX1N6391 JANTX1N6391 JANTXV1N6391 JANTXV1N6391 SBR2545 SBT2545 1N6792 1N6792R 1N6793 1N6793R

switching transistor 331

Abstract: datasheets diode 1n6095 1N6096 C 331 Transistor DO-203AA schottky rectifier transistor C 331
Contextual Info: PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF AV Rectangular 25* A 30/40* V IFSM @ 60Hz 400* A VF @ 80 Apk, TJ= 70°C 0.86* V TJ range - 65 to 125* °C

diode 1n6095

Abstract: datasheets diode 1n6095 1N609 1N6095 1N6096 40HFL40S02 DO-203AA IRFP460
Contextual Info: PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF AV Rectangular 25* A 30/40* V IFSM @ 60Hz 400* A VF @ 80 Apk, TJ= 70°C 0.86* V TJ range - 65 to 125* °C

18CPQ100

Abstract: 50HQ050 18CPQ030 18CPQ040 18CPQ050 18CPQ060 18CPQ090 30CPQ030 30CPQ040 30CPQ050
Contextual Info: INTERNATIONAL RECTIFIER H E Schottky Rectifiers | 4flS5452 0010021 0 | -f-o'S-CL I 18 TO 60 AM PS Part Number ' f AV @ TC VRWM m (A) (°C) VFM 'h h ® T j = 125°C & •f m Rated VRW H (A) Max. T j (mA) <°C) Case Style T 0 -2 4 7 A A 18CPQ030 18CPQ040

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

INTEX

Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201