SD41 Search Results

SD4150

Contextual Info: SILICON PLANAR EPITAXIAL HIGH SPEED DIODE MarkinS SD4150 = D18 PACKAGE OUTLIN E DETAILS ALL D IM EN SION S IN mm 3.0 0.14 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE -K 0.90 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage . Repetitive peak reverse voltage

SD41

Abstract: SD4145
Contextual Info: 30 Amp Schottky Rectifier SD41, SD4145 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode. Reverse P o larity Stud is Anode A B C D E F

BYV21-45

Abstract: BYV21-30 BYV21 SD41 30A schottky 150M USD400 USD420 USD435 USD445
Contextual Info: ¡wn-ao usd42o POWER SCHOTTKY RECTIFIERS ysjms 25A, 30A and 40A Up to 45V SD41 DESCRIPTION FEATURES • • • • Unitrode’s series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high

SD4150

Abstract: 860 diode
Contextual Info: SILICON PLANAR EPITAXIAL HIGH SPEED DIODE M arking SD4150 = D18 PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN mm 3.0 0.14 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE ABSOLUTE M AXIM UM RATINGS Continuous reverse voltage Repetitive peak reverse voltage

Contextual Info: , One. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 30 Amp Schottky Rectifier SD41. SD4145 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 10-32 UNF3A threads 2. Full threads within 2 1/2

SD411

Abstract: XSD411
Contextual Info: N-Channel Enhancement Mode Dual DMOS FET C Ü IO Ü IV , CORPORATION \J SD411 FEATURES DESCRIPTION • • • • The SD411 is constructed utilizing C alogic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent

SD411

Abstract: XSD411
Contextual Info: N-Channel Enhancement Mode Dual DMOS FET CORPORATION SD411 FEATURES • Normally "OFF" Configuration • High Speed Switching. . . . . . . . . . under 1 ns typically Low Capacitance . . . . . . . . . ciss <3.5 pf (typically) • Ultra • Tight Matching Characteristics

1N6095

Contextual Info: 1N6095 1N6096 SD41 MOTOROLA S C H O T T K Y B A R R IE R R E C T IF IE R S S W IT C H M O D E P O W ER R E C T IF IE R S 2 5 and 3 0 A M P E R E S 3 0 to 4 5 V O L T S u s in g t h e S c h o t tk y B a r r ie r p r in c ip le w it h a p la t in u m b a r r ie r m e ta l

resistors valu

Contextual Info: SD4100 PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to introduction and SGS-THOMSON assumes no liability for use of information contained herein.

SD4150

Abstract: 1N4150
Contextual Info: RECTRON SEMICONDUCTOR SD4150 TECHNICAL SPECIFICATION SURFACE MOUNT 1N4150 DIODE SOT-23 Absolute Maximum Ratings Ta=25°C ITEMS SYMBOL RATINGS UNIT Reverse VR 50 V Voltage Reverse trr 6 ns Recovery Time ForwardVoltage VF 0.86 V @ If = 50 mA ForwardCurrent IF

SD41

Abstract: SD4145
Contextual Info: Transys SD41 R THRU SD4145(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 30 A Features 30Amp Rectifier 35-45 Volts High Surge Capability Types up to 45V V RRM DO-4 Maximum Ratings B Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175

Contextual Info: SD41 R THRU SD4145(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 30 A Features 30Amp Rectifier 35-45 Volts High Surge Capability Types up to 45V V RRM DO-4 Maximum Ratings B Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175

Contextual Info: SD41 thru SD4145R Silicon Power Schottky Diode VRRM = 35 V - 45 V IF = 30 A Features • High Surge Capability • Types up to 45 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: N-Channel Enhancement Mode Dual DMOS FET SD411 FEATURES DESCRIPTION • • • • • The SD411 is constructed utilizing C alo gic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent

Contextual Info: DIGITRON SEMICONDUCTORS SD41 30 AMP SCHOTTKY BARRIER RECTIFIERS ELECTRICAL CHARACTERISTICS Symbol Value Working peak reverse voltage Characteristics VRWM 35V Test Conditions Repetitive peak reverse voltage VRRM 35V Average forward current IF AV 30A TC = 140°C, square wave, RӨJC = 1.6°C/W

TO-247 Package

Abstract: TO247 package
Contextual Info: POWER SCHOTTKY RECTIFIERS SD41P 60A Pk, 45V FEATURES DESCRIPTION • Econom ical Convenient TO-247 Package • Insulated M ounting Hole • Can B e C lip Mounted • M e ch an ically Rugged • Low Therm al Resistance • Extrem ely Low V f The S D 4 1 P Device, in the econ om ical, convenient TO-247 package, is sp e cific a lly

sd4100

Abstract: thomson video M173
Contextual Info: SD4100 PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to introduction and SGS-THOMSON assumes no liability for use of information contained herein.

sd4100

Contextual Info: SD4100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD4100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness.

Contextual Info: SD41 thru SD4145R Silicon Power Schottky Diode VRRM = 35 V - 45 V IF = 30 A Features • High Surge Capability • Types up to 45 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

d237

Abstract: SD41 D-235 d235 21FQ DO-203AA SD-41
Contextual Info: International [mlRectifier SD41 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics Characteristics SD41 Units IF av Rectangular waveform 30 A 35/45 V lFSM 60Hz 600 A VF 0.70 V -65to150 "C V RWM TJ «60A p k,T j-150°C The SD41 Schottky rectifier has been optimized for very low

sd4100

Contextual Info: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED

SD411HD

Abstract: 1D24 vgd schematic diagram SD5000
Contextual Info: TOPAZ SEMICONDUCTOR OSE D J^GflSaab 0001024 3 | 7~"~ -L T S0411 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL D-MOS FET ORDERING INFORMATION SD411HD TO-78 Hermetic Package FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ Normally OFF Configuration Low Interelectrode Capacitances

sd4100

Abstract: push pull class AB RF linear L band
Contextual Info: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED

SD41

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# SD41 Features • • • • 25 Amp Schottky Barrier Rectifier 45 Volts Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection