1SS272 Search Results

Contextual Info: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 Unit: mm ○超高速度スイッチング用 z 順方向が良い。 : VF 3 = 0.92V (標準) z 逆回復時間が短い。 : trr = 1.6ns (標準) z 端子間容量が小さい。

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: TOSHIBA 1SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE WÊÊF • WÊÊF m Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-61 : Vjr 3 = 0.92V (Typ.) : tj* ^ 1.6ns (Typ.)

f1 smd marking

Abstract: marking A1 1SS272 smd marking A1
Contextual Info: Diodes SMD Type Ultar High Speed Switching Applications 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS272 TO SHIBA 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Unit in mm Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: Product specification 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage

1SS272

Contextual Info: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

1SS272

Contextual Info: 1SS272 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 2.9 -0. 3 . Small Package : SC-61 . Low Forward Voltage : Vp=0.92V Typ. _L . Small Total Capacitance : Ct =0.95pF(Typ.) •si 4 1.90 . Fast Reverse Recovery Time : trr=1.6ns(Typ.)

1SS272

Contextual Info: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 ○ 超高速度スイッチング用 z z z z 外形が小さい。 順方向が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF = 0.92V 標準

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16