2SA1213 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1213-O

Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS Low Saturation Voltage : VCE (sat)= —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg=1.0/«s(Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR（PNP ） ＳＯＴ－８９ FEATURES Power dissipation PCM : 0.5 W （Tamb=25℃） Collector current ICM: -2 A Collector-base voltage V BR CBO : -50

Contextual Info: MCC 2SA1213-O TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: 2SA1213 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate)

PNP marking NY sot-223

Contextual Info: SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25℃) 1. BASE A 2. COLLECTOR1 2 V 3 3. EMITTER Operating and storage junction temperature range

Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1213 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

2SA1213

Contextual Info: 2SA1213 2SA1213 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25℃) 1. BASE A 2. COLLECTOR1 2 V 3 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SA1213-O

Contextual Info: MCC 2SA1213-O TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components Features • • • • • 2SA1213
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213

Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213Y

Abstract: 2SA1213-O
Contextual Info: MCC TM Micro Commercial Components 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features x x x x x PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

2SC2873Y

Abstract: Transistor 2SC2873 2sc2873
Contextual Info: 2SC2873 2SC2873Y SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * LOW SATURATION VOLTAGE. * FAST SW ITCHING. * COMPLEMENTARY TYPE - 2SA1213. PARTMARKING DETAILS - 2SC2873 - M Y 2SC2873Y - M O ABSOLUTE MAXIMUM RATINGS 2SC2873 2SC2873Y SYMBOL PARAMETER

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 µs (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TO SH IBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • • • • • : V c e (sat)~ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tgtg^l.O/^siTyp.)

Contextual Info: TO SHIBA 2SA1213 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage • • • • High Speed Switching Time: tstg = 1.0//S(Typ.) P(} = 1~2W (Mounted on Ceramic Substrate)

Contextual Info: MCC Features • • • • • 2SA1213
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)