1SS348 Search Results

1SS348

Abstract: CT marking
Contextual Info: 1SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING Unit in mra . Low Forward Voltage : V f =0.56V Typ. . Low Reverse Current : lR=5/JA(Max.) . Small Package MAXIMUM RATINGS : SC-59 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT

k9 diode

Abstract: smd transistor marking 26 1SS348
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1

1SS348

Contextual Info: TOSHIBA 1SS348 TOSHIBA DIODE 1 SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59 + 0.25

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: Product specification 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage current: :IR = 5 A(Max).

Contextual Info: T O SH IB A 1SS348 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS348 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • • + 0 .5 2 .5 - 0 .3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

TD236

Abstract: 1SS348
Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.56V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: T O SH IB A 1SS348 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS348 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5-0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-59

1SS348

Abstract: TD236
Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 1SS348 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0 .3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : I r = 5/ A (Max.) Small Package : SC-59 + 0.25

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.56V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード