TD236 Search Results

TD236

Contextual Info: NOTES: 1, D&E DD NOT INCLUDE MOLD FLASH, 2, MOLD FLASH DR PROTRUSIONS NEIT TD EXCEED ,15mm .006" , 3, CONTROLLING DIMENSION: MILLIMETERS, 4, MEETS JED EC TD236, INCHES MIN 0,031 0,001 0,014 MAX 0,047 0,005 0,022 MIN 0,787 0,025 0,356 MAX 1,194 0,127 0,559

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

TD236

Abstract: 1SS336
Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)

1SS336

Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)

1SS336

Abstract: td236
Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)

1SS337

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.)

nec k 813

Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

s-mini

Abstract: SMini
Contextual Info: S -M IN I-2 -3 F 1 A U n iti nn I ft JEDECII'K E I A J □~ K mm$ ftâ Ic S—MINI TD-236MDD SC-59 2-3F1A - A u g .2000

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

1SS344

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)

1SS337

Abstract: 88 diode toshiba
Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)

1SS344

Abstract: TD236
Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)

1SS348

Abstract: TD236
Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

Zener sot marking 162

Abstract: marking 8D SOT 89 marking 81t marking 81J
Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

1SS344

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)

1SS344

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)

1SS337

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)