1SV31 Search Results

1SV310

Contextual Info: 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.1 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C)

power control 62613

Abstract: TA75107 1SV315 ENN6261
Contextual Info: Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Package Dimensions unit:mm 1246A [1SV315] 0.425 • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller.

Contextual Info: T O S H IB A 1SV312 T O SH IB A D IO D E SILICON EPITAXIA L PIN TYPE 1 SV3 1 2 V H F -U H F B A N D RF A T T EN U A T O R A PP LIC A T IO N S U n it in mm 2.1 ± 0.1 Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.

Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA 1SV311 TOSHIBA DIO DE SILICON EPITAXIAL PLANAR TYPE 1 S V 3 11 VCO FOR UHF BA N D RADIO • • • U n it in mm High Capacitance Ratio r C iv I C-4V = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner 0.6 ± 0.1 M A X IM U M RATINGS (Ta=;250C}

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1S553T

Abstract: 1S553 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & 1S362 1S363 1S553T-HP tt « 1S2139-B 1S2139-C 1S2339 1S2790 1SV29 isno 1SV31 1SV32 1SV33 1SY49 1SV52 1SV53-A 1SV53-B 1SV54 1SY54-G 1SV56 1SV57 1SV71 1SV72 1SV73 1SV74 1SV89 1SV100 1SV101 1SV102 1SV103 3SV114 1SV123 1SV124 1SV125 Vrm Vr C t ,C j * p F

1SV313

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SV311

Contextual Info: 1SV311 TO SH IBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 1 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

1SV310

Contextual Info: TO SH IBA 1SV310 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Unit in mm : C i v / C 4 v = 2.1 Typ. : rs = 0 .2 8 0 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

1SV311

Contextual Info: 1SV311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.1 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner Maximum Ratings (Ta = 25°C) Characteristics

1SV310

Contextual Info: 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.1 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SV311

Contextual Info: 1SV311 TOSHIBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1SV3 1 1 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

1SV310

Contextual Info: 1SV310 東芝ダイオード シリコンエピタキシャルプレーナ形 1SV310 ○ UHF 帯無線 VCO 用 単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.28 Ω 標準 • 2 端子超小型外囲器なので､VCO の小型化に適しています。

1SV312

Contextual Info: 1SV312 東芝ダイオード シリコンエピタキシャルPIN形 1SV312 ○ VHF･UHF バンド減衰器用AGC 用 単位: mm • 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており、超高密 度実装に適しています。

1SV314

Contextual Info: 1SV314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 Typ. z Low Series Resistance : rs = 0.35 Ω (Typ.) Unit: mm z Useful for Small Size Tuner Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SV311 T O SH IB A TOSHIBA DIODE 1 S V 3 11 VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

DIODE smd marking v1

Abstract: 1SV310 smd diode marking 111
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV310 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=2.1 Typ. Low Series Resistance:rs=0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02

Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

1SV310

Contextual Info: 1SV310 TOSHIBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 Unit in mm High Capacitance Ratio : C iy /C 4v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

c05 10 diode

Abstract: diode c05 c05 10 73 diode TOSHIBA DIODE C2 5
Contextual Info: 1SV314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV314 VCO FOR UHF BAND RADIO High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 Typ. Low Series Resistance : rs = 0.35 Ω (Typ.) Unit: mm Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SV313

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm z High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. z Low Series Resistance : rs = 0.35Ω (Typ.) z Useful for Small Size Tuner ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)