70GHZ Search Results

Contextual Info: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V3 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration

1117 FG

Abstract: nkba
Contextual Info: SOUND GENERATORS voltage c m s o u m C B-09G P *5V. S.70GHZ, /Z duty. 75mm Ittttl/S p e c if¡cations CB-09GP) 5 < « *> AveraSe current . . ^ « » » « ^ c o n s u m p tio n * (mA> BSEffitt; DC resistance (9) 25 ^*«S«nge<VDC> max. 100 gac* Sound

RF AMPLIFIER marking A01

Abstract: marking 53 Sot-343 BFP620
Contextual Info: BFP620 NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • • • • Gms=21dB at 1.8 GHz Gold metalization for high reliability 70GHz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VCE=2V, ICE=6mA

Contextual Info: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V2 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration

sirfstariii

Abstract: GPS lna SMA661AS gps cell wireless
Contextual Info: SMA661AS – the best low noise amplifier for all GPS products Fully-integrated GPS LNA Due to its superior RF performance, the fully-integrated SMA661AS from STMicroelectronics is the leading solution for GPS LNA implementation in cell phones and personal navigation

50GHz awg

Abstract: upc 1235 BKM-51000 DWDM AWG arrayed waveguide Arrayed Waveguide Grating W300C 40-channels
Contextual Info: ASOC Multiplexer and Demultiplexer BKM-51000 Family Bookham Technology’s family of Multiplexers Mux and Demultiplexers (Demux) provide a range of high performance components fabricated using ASOC technology. Arrayed Waveguide Gratings (AWG) are the leading solution for high

MGF1202

Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
Contextual Info: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)

MGF1502

Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A

Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,

2SK1227

Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060
Contextual Info: ft f m % ít ffl € m m & X % * fr K * V ft (V) 2SK1203 a i SW-Reg, D D C MOS N E 9 00 D S S ±20 2SK1204 H i SW-Reg, D D C MO S N E 900 D SS ±20 a» X P d/Pc h I* ft* (A) (max) (A) Vd s (V) (min) (V) (max) V d s (V) (V) (13=25^) tí g m (min) (typ)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

C8660

Abstract: transistor 1BW fiber array
Contextual Info: New from from Hamamatsu Hamamatsu Terabit Optical Oscilloscope C8660 40 Gbps, 16-channel simultaneous measurement! Due to its bandwidth of 70 GHz per channel, this device can measure high-speed opticalcommunication signals at 10 Gbps or 40 Gbps with high precision.

DSA80000

Abstract: N5476A DSO81304 N5444A 5989-7894EN N2795A N5443A E2675A N5380 N2803
Contextual Info: Infiniium Oscilloscope Probes and Accessories Data Sheet To get the most out of your Infiniium oscilloscope, you need the right probes and accessories for your particular applications. Whether you need the high bandwidth and low loading of an active probe, an easy way to connect to surface mount ICs, or a passive

2sk270

Abstract: 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK247 2SK389 2SJ91 2SK261
Contextual Info: - 40 - 41 - % m tí & Ta=25'C u Cis (typ) (p F) Crs (typ) (pF) Vg s (V) typ max dB dB Vd s (V) f (Hz) Re <Q) R d s (ON) (max) Vg s (V) (0) •£ <D f& fé '14 Id (A) m £ & yfu 5* & m n m 10 82B SDG 2SK24G 7. 5 5 105A SDG 2SK247 800 -5 10 1.12 15 4 28A GDS

murata capacitor 0603 GRM188

Abstract: murata grm188 capacitor gps lna
Contextual Info: SMA661AS Fully integrated GPS LNA IC Feature summary • Power down function ■ Integrated matching networks ■ Low noise figure 1.4 dB @ 1.575 GHz ■ High gain 17 dB @ 1.575 GHz ■ High linearity IIP3 = +3dBm ■ Temperature compensated ■ Unconditionally stable

IrL 1540 N

Abstract: MURATA GPS FILTER A661 GRM188 JESD97 SMA661AS SMA661ASTR
Contextual Info: SMA661AS Fully integrated GPS LNA IC Features • Power down function ■ Integrated matching networks ■ Low noise figure 1.15 dB @ 1.575 GHz ■ High gain 18 dB @ 1.575 GHz ■ High linearity IIP3 = +3dBm ■ Temperature compensated ■ Unconditionally stable

70GHz HEMT Amplifier

Abstract: inp hemt power amplifier vamp InP transistor HEMT
Contextual Info: NS 2P N221 1 Oct. 2004 CI0401 Preliminary 43 Gb/s Data Limiting Amplifier Features Data bit rate : DC - 43 Gb/s Saturated output voltage amplitude : 0.9Vpp Small signal gain : 20dB General Description The CI0401 is an ultra-fast InP HEMT Limiting Amplifier operating at rates up to 43

motherboard service guide

Contextual Info: Agilent  N5247A  2-Port and 4-Port PNA-X Microwave  Network Analyzer  10 MHz - 70 GHz Service Guide Agilent Technologies Notices Agilent Technologies, Inc. 2009-2014 Manual Part Number No part of this manual may be reproduced in any form or by any means (including

Contextual Info: PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noise amplification up to 110GHz with a typical Ft of 130GHz, a power density