1E SOT23 Search Results

FMMTA43

Abstract: FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Contextual Info: FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 – JANUARY 1996 ✪ PARTMARKING DETAIL – FMMTA42 – 3E FMMTA43 – 1E FMMTA42R – 7E FMMTA43R – 5E 160 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio

B 660 TG

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS

Contextual Info: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole

jp1e

Abstract: HT12S11 D353G 777HFR th 558 cpu cap 100 39p 904251 FPC CON 24P PWA-5033HPM LCD inverter circuit mitac
Contextual Info: 1998/9/29 * PC;5033TX/TH-001-M/JP-1E/1XB JP Spare Parts List * A PART_NO 526266553018 .1 416266553006 .2 431665530002 .3 411665500204 .4 242600000001 .4 242600000145 .4 242600000158 .4 242600000169 .4 242600000172 .4 242600000195

SMD MARKING A42

Abstract: a42 SMD wa43 marking a42 sot-23 smd a42 CMBTA42 CMBTA43 CMBTA
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS

SM-8 Package

Abstract: S08PACKAGE T8 SOT23
Contextual Info: Voltage Regulator Connection Diagrams S0 8 Package Suffix - N8 1 SOT223 4 2 - - 7 1E 2C 3 - - 6 3 C Top View > Top View Pin 4 floating or connected to pin 2 SOT23 Package Suffix - F T092 3d □ 1 2C Top View SM 8 Package Suffix - G Package Suffix - T8

a42 SMD

Abstract: CMBTA42 CMBTA43 SMD MARKING A42 A42 1d sot-23 CMBT A42 1d sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

SMD MARKING A42

Abstract: a42 SMD CMBTA42 smd a42 CMBTA43 npn A42
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

marking 1E

Abstract: BC848
Contextual Info: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847A 1E BC847B 1F BC848A 1J BC848B 1K 2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENTS ARE RESPECTIVELY

Contextual Info: MMBTA43 MMBTA43 C E SOT-23 B Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel

Contextual Info: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 TOP VIEW Mechanical Data_ • • • • 1e 1 C ase: SO T-23, M olded Plastic

MMBTA43

Abstract: MPSA42 MPSA43
Contextual Info: N MPSA43 MMBTA43 C E C TO-92 BE B SOT-23 Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

MPSA42

Abstract: MMBTA43 MPSA43
Contextual Info: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

BC847

Abstract: MARKING 1E SOT-23
Contextual Info: SEMICONDUCTOR BC847 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1E 1 2 Item Marking Description Device Mark 1 BC847 hFE Grade E E, F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

h104k

Abstract: C1608JB1 TDK C3216JB1 CPH3206 SANYO SC-62 SB05-05CP H473K RR0816P153D H103K MCH3309
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71102-1E ASSP for Power Supply Applications Evaluation Board MB39A102 • DESCRIPTION The MB39A102 evaluation board is a surface mount circuit board with four channels of up conversion, down conversion and up/down conversion circuits. The internal structure consists of one channel of step-down type,

1H104K

Abstract: 8T139 1H104 C1608JB 1H222K MB39A110 8550 SOT-23 PACKAGE C3216JB C220 MCH3307
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71108-1E ASSP for Power Supply Applications Evaluation Board MB39A110 • DESCRIPTION The MB39A110 evaluation board is a surface mount circuit board with four channels of down conversion and up/ down conversion circuits. The internal structure consists of 2 channels of step-down synchronous rectification

CBVK741B019

Abstract: F63TNR MMBTA43 MPSA42 MPSA43 PN2222N DATE CODE FAIRCHILD
Contextual Info: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

KSC340

Abstract: k 23 mal
Contextual Info: TRANSISTORS FUNCTION GUIDE 1-4. High Voltage Transistors 1-4-1. SOT-23 Type Transistors Device and Polarity Condition ^CEO 00 KST42 1D KST92(2D) 300 KST43(1E) KST93(2E) 200 KST540(2L) 150 KST5550(1F) 140 1-4.2. TO-92S Type Transistors NPN PNP ic W 0.5 0.5

LTL907PK

Abstract: 907e HF 907 OM LTL-907LK LTL-907PK LTNE LTL-907 LTL-907E IR 907
Contextual Info: 1 LITE-ON INC 3 1E D a SS3fc.3b7 0D D nfl2 2 E3LTN SOT-23 SURFACE MOUNT u iE im LTL-907PK/907LK/907EK ! ~ V - t- \{ - 2 . \ FEATURES • • • • M ICROMINIATURE PACKAGE LED LAMP. SURFACE MOUNT ASSEMBLY LAMP. SINGLE CHIP. HIGH EFFCIENCY/LOWER POWER CONSUMP­