1EE MARKING Search Results

BSV52L

Contextual Info: 1EE D M A X IM U M RATINGS * Value U nit VCEO 12 Vdc VCBO 20 Vdc ic 100 mAdc Symbol Rating Coliector-Emitter Voltage Collector-Base Voltage Collector Current — Continuous h I b3fc.7Z5M 0 0 f l 5 ^ M 5 MOTOROLA SC XSTRS/R BSV52L Characteristic Symbol Max

MMBR2060

Contextual Info: 1EE D § b3b?254 □□07200 1 | MQTQRCLA SC MOTOROLA XSTRS/R F T - Z H -l _ SEMICONDUCTOR TECHNICAL DATA MMBR2060 The RF Line N P N Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin-film circuits using surface

Contextual Info: 1EE D I M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Vebo 5.0 Vdc Rating Emitter-Base Voltage ic Collector Current — Continuous MOTOROLA SC mAdc . 100 Sym bol M ax PD 225 mW 1.8 m w rc

2n5179 motorola

Abstract: MMBR5179
Contextual Info: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif­

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

2SD1401

Abstract: 2042A 5033K
Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed

b1181

Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process

Contextual Info: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

TRANSISTOR FS 2025

Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Contextual Info: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C

Contextual Info: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage

2SD1161

Abstract: sj 2025 sj 2038 B1181 DDD3710 marking D63 N1CJ Transistor 2SD1161 la 1201 sanyo
Contextual Info: SANYO SEMICONDUCTOR CORP I S E D T T W O ?!, □ 0 D 4 cm T - a ? - j g: 2 S D 1 1 •6 1 - •ST’S»'- # 2054 N P N E p ita x ia l P la n a r S ilic o n T r a n s is t o r Piezoelectric Buzzer Driver Applications with Emitter Resistance 849B Features

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

2SK283

Abstract: STK282-170-E sanyo DDD3710 ss 7941 1501T
Contextual Info: S ANYO SEMICONDUCTOR CORP IS E D I 7 cH 7 []7 t, T - 3 S ' - } 2SK283 # N -C h a n n e l J u n c tio n S ilico n F ie ld -E ffe c t T ran sistor High Voltage Driver Applications 794E FEA TU RES * Because it is encapsulated in an ultra compact package, compact and low-profile sets can be designed.

3SK167

Abstract: transistor Bc 313 NF 28
Contextual Info: SANYO SEMICONDUCTOR 1SE CORP D I 7 cn ? 0 7 b 0 D D S 47 2 r-3 1- 3SK167 2046 G a A s Dual Gate M E S Silico n Field-Effect Transistor UHF Amp, Mixer Applications 1908A features . High power gain and small noise resistance . Small input/output capacitance, reverse transfer capacitance

2SK376

Abstract: DDD3710 VLN 2003a
Contextual Info: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.

Sanyo D313

Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

Contextual Info: M O TO RO LA Order this document by MBR20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Dual Schottky Rectifier MBR20200CT . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power

Net to Net Technologies

Abstract: ip dslam GR-1089-CORE GR-63-CORE RJ21
Contextual Info: ADSL MiniDSLAM AMD8000-12 AMD8000-12 ADSL MiniDSLAM Deliver Full Rate and G.lite ADSL from the Remote Terminal Overview Features Net to Net Technologies’ ADSL MiniDSLAM is the industry’s first Utilizes Net to Net’s IPacket Architecture IP-based remote access DSLAM that provides both Full Rate and

Contextual Info: Metallized Polypropylene Capacitor for Motor Running & Lighting Ballast ECWFJfc ECWF Series LTt&ft;? A compact, light-weight capacitor designed for use in motor running and in electrical equipment such as lighting, etc. Non-inductive type using metallized polyplopylene

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W240FU Inverted, 3-State Outputs The TC7W240FU is a high speed C2MOS Dual Bus Buffer fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.

IC 7489 DATASHEET

Abstract: Diode B93 zener 7489 truth table pin diagram of ic 7489
Contextual Info: September 3rd, 2012 Automotive Grade AUIRS2332J 3-PHASE BRIDGE DRIVER IC Features • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune

NEC D765

Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Contextual Info: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator