2SK376 Search Results

2SK3766

Contextual Info: 2SK3766 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3766 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)

Contextual Info: 2SK3769-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters

K3761

Abstract: 2SK3761 DS1015
Contextual Info: 2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3761 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 13.4 min 13.4 min. Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

K3763

Abstract: 2SK3763 MARKING toshiba 133 2SK37
Contextual Info: 2SK3763 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3763 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 Drain-source voltage 6.6 max. 15.6 max 15.6 max. Symbol Rating Unit

transistor k3767

Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent
Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

2SK3762

Abstract: K3762 MARKING toshiba 133
Contextual Info: 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅣ 2SK3762 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 1.5 max 1.5 max 3.93.9max max. 13.4 13.4 min min. Maximum Ratings (Ta = 25°C)

transistor k3767

Abstract: K3767 2SK3767
Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

2SK3760

Contextual Info: 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3760 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 6.6 max. 15.6 max 15.6 max. 1.5 1.5 max max 3.9 max. 13.4 13.4min min.

JIS B1181

Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
Contextual Info: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.

k3767

Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)

120V DC to DC Converter 10A

Abstract: 2SK3769-01MR
Contextual Info: 2SK3769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

Contextual Info: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK376

Abstract: DDD3710 VLN 2003a
Contextual Info: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.

2SK3766

Abstract: 2-10U1B JEITA SC-67
Contextual Info: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)

K3767

Abstract: 2SK3767 equivalent k3767 C5016
Contextual Info: 2SK3767 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3767 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 3.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。

transistor k3767

Abstract: K3767 2sk3767
Contextual Info: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

2SK3766

Contextual Info: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

k3767

Abstract: 2SK3767 equivalent k3767
Contextual Info: 2SK3767 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3767 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 3.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。

2SK3766

Contextual Info: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
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