1F4000H Search Results

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

AT26DF161A-SSU

Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163 AM29DL164DT M4200
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

AD7705

Contextual Info: a AD7705/AD7706/AD7707 Instrumentation Converter FAQs: Serial Interface How does the serial interface operate? The serial interface on this family of converters is implemented as a state machine. The interface works by counting clocks on each data transfer. Therefore, if you are performing a write operation to one of the ADC’s 8-bit registers, 8 SCLK cycles

DL162

Abstract: DL163
Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 History Issue Date Initial issue

DS07-16401-1E

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-16401-1E 32-bit RISC Microcontroller CMOS FR50 Family MB91360G Series MB91FV360GA/F361GA/F362GA • DESCRIPTION The Fujitsu MB91360G series is a standard microcontroller containing a wide range of I/O peripherals and bus

Contextual Info: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit

2228H

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

DL162

Abstract: DL163
Contextual Info: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

EN39SL160

Abstract: cFeon EN cFeon serial Flash chip 07c0
Contextual Info: EN39SL160H/L EN39SL160H/L 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.

MB84VD2118XA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

DIODE marking A19

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: MBM29DS163TE/BE10 Data Sheet Retired Product MBM29DS163TE/BE 10 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

A160CT12

Contextual Info: ADVANCE INFORM ATIO N AM D ii Am29SL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES S O FTW A R E FEATURES • Secured Silicon (SecSi) Sector: 256-byte sector

A82DL1632TG-70UF

Abstract: DL1632
Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit