1GG6 Search Results

1gg6

Contextual Info: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)

1gg6

Abstract: agilent HMMC
Contextual Info: Agilent HMMC-5040 20–40 GHz Amplifier 1GG6-4066 Data Sheet Features • Large bandwidth: 20 to 44 GHz typical 21 to 40 GHz specified • High gain: 22 dB typical • Saturated output power: 21 dB typical • Supply bias: ≤ 4.5 volts @ ≤ 300 mA Chip size:

Contextual Info: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)

Contextual Info: Agilent 1GG6-8083 250–8000 MHz MMIC Low Distortion IQ Modulator TC932 Data Sheet Features • Broadband: 250 - 8000 MHz • High Linearity: -74 dBc ACLR 4-carrier WCDMA, 2 GHz • Low +8 dBm LO Drive Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions:

1gg6

Abstract: application tca 780 MA3531 agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7–32 GHz Amplifier 1GG6-8008 Data Sheet Features • • • • • 26 dBm output P –1 dB at 28 GHz High gain: 18 dB 50 Ω input/output matching Small size RF detector network Chip size: Chip size tolerance: Chip thickness: Pad dimensions:

1gg6

Abstract: 1GG6-8070 TC956 1GG6-4070 GaAs MMIC ESD, Die Attach and Bonding Guidelines TC906 Die Attach and Bonding Guidelines 8070 1gg64070 AGILENT 3070
Contextual Info: Agilent 1GG6-8070 40–68 GHz Medium Power Amplifier TC956 Data Sheet Features • Frequency Range: 30–70 GHz useable range • Small Signal Gain: 18.8 dB • P–1 dB: 14 dBm • P–3 dB: 17.6 dBm • Return Loss: 10 dB Input 10 dB Output Chip Size: Chip Size Tolerance:

MMIC Amplifier A08

Contextual Info: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)

guide gaas mmic distributed amplifier

Abstract: 1gg6 2686 0112 agilent HMMC Traveling Wave Amplifier
Contextual Info: Agilent HMMC-5025 2-50 GHz Distributed Amplifier 1GG6-8000 Data Sheet Features • Frequency Range: 2-50 GHz • Small Signal Gain: 8.5 dB • P-1 dB @ 40 GHz: 12 dBm • Noise Figure: 5 dB @ 2-35 GHz 7 dB @ 35-50 GHz • Return Loss: In/Out: <- 10 dB • 30 dB Gain Control

1gg6

Contextual Info: Agilent HMMC–5023 23 GHz LNA 21.2–26.5 GHz 1GG6-8001 Data Sheet Features • Frequency range: 21.2-23.6 GHz and 24.5-26.5 GHz specified 21-30 GHz performance • Low-noise temperature: 226 k (2.5 dB N.F.) typical • High gain: 24 dB typical • 50 Ω input/output matching

Contextual Info: Agilent 1GG6-8054 DC–75 GHz SPDT GaAs MMIC Switch TC950 Data Sheet Features 630 x 930 µm 24.8 x 36.6 mils ± 10 µm (± 0.4 mils) 50 ± 15 µm (2.0 ± 0.6 mils) 80 x 80 µm (3.2 x 3.2 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions:

TCA 789

Abstract: 1gg6
Contextual Info: Agilent HMMC–5023 23 GHz LNA 21.2–26.5 GHz 1GG6-8001 Data Sheet Features • Frequency range: 21.2-23.6 GHz and 24.5-26.5 GHz specified 21-30 GHz performance • Low-noise temperature: 226 k (2.5 dB N.F.) typical • High gain: 24 dB typical • 50 Ω input/output matching

TC950

Abstract: 1gg6 8054 1GG6-8054 GaAs MMIC ESD, Die Attach and Bonding Guidelines 0747 ics
Contextual Info: Agilent 1GG6-8054 DC–75 GHz SPDT GaAs MMIC Switch TC950 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The TC950 is a GaAs monolithic microwave integrated circuit MMIC switch designed for low insertion loss and high isolation

45580

Abstract: 1gg6-8002 TCA 430 1gg6 TCA 975 HMMC-5020 hmmc-5 tca 761
Contextual Info: Agilent HMMC-5618 6–20 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

Contextual Info: M ITSUBISHI M IC RO CO M PUTERS 3806 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • Clock generating c ir c u it. Internal feedback resistor T he 3806 group is 8 -b it m icro co m p ute r based on the 740 fa m ily connect to external ceram ic resonator or quartz-crystal