1K X 8 BIPOLAR Search Results

a26c

Abstract: 1K x 8 static ram 1k BIT WORD STATIC RAM MOSTEK MEMORY MOSTEK ROM MK4801A-90 Mostek MK4801 MK4801A Bipolar ROM 1K X 4
Contextual Info: MQSTEK 1K x 8-BIT STATIC RAM MK4801 A P /J /N Series □ High perform ance FEATURES □ Static operation Part No. Access Time □ Organization: 1K x 8 bit RAM JEDEC pinout □ Pin com patible w ith M ostek's BYTEWYDE m em ory fam ily □ 2 4 /2 8 pin R O M /P R O M com patible pin configuration

4801A

Abstract: TWD 1117 MOSTEK ROM 13003 application notes K4801 MK4801A MK48p MK4801A-90
Contextual Info: MK4801A W,P 55/70/90 m 1K d £ x 8 B IT S T A T IC R A M MEMORY CO M PONENTS FE ATUR ES □ CE and OE fu n ction s facilitate bus control □ Static operation R /W □ O rganization: 1K x 8 bit RAM JEDEC pin o ut A cce ss T im e P a rt N o. / T □ Pin com patible w ith M ostek's BYTEWYDE mem ory

ScansUX82

Abstract: 82S126A 82S129A GDFP2-F16 GDIP1-T16
Contextual Info: Product specification Philips Semiconductor» Military Bipolar Memory Products 8 2 S 1 2 6 A 1K-bit TTL bipolar PROM 256 x 4 8 2 S 1 2 9 A FEATURES DESCRIPTION • Address access time: 35ns max The 82S126A and 82S129A are field programmable, which means

32 x 32 matrix

Abstract: 256 x 4 TTL PROM Memory with 3-state outputs
Contextual Info: Product specification Philips Semiconductor» Military Bipolar Memory Products 8 2 S 1 2 6 A 1K-bit TTL bipolar PROM 256 x 4 8 2 S 1 2 9 A FEATURES DESCRIPTION • Address access time: 35ns max The 82S126A and 82S129A are field programmable, which means

tda 7681

Abstract: harris 7681 Harris Semiconductor HM7681 HM-7681-2 7681-2 HM-7681 HM-7681A 7681A-5 HARRIS PROM 7681-5 tda2
Contextual Info: HM-7681 HARRIS HIGH SPEED 1K x 8 PR O M Features • Pinouts F A S T A D D R E S S A C C E S S T IM E H M -7 6 8 1 . 7 0 ns M A X IM U M H M - 7 6 8 1 A .5 0 ns M A X IM U M

Contextual Info: 35A CY7C235A 1K x 8 Registered PROM Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed — 25 ns address set-up Functional Description The CY7C235A is a high-performance 1024-word by 8-bit

7C235A-40

Abstract: CY7C235A CY7C235A-25PC CY7C235A-30JC CY7C235A-40DMB CY7C235A-40PC 7C235A-30
Contextual Info: 1CY7C235A CY7C235A 1K x 8 Registered PROM Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed — 25 ns address set-up Functional Description The CY7C235A is a high-performance 1024-word by 8-bit

CY7C235A

Abstract: CY7C235A-25PC CY7C235A-30JC CY7C235A-40DMB CY7C235A-40PC 7C235A-40 C235A
Contextual Info: 1CY7C235A CY7C235A 1K x 8 Registered PROM Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed — 25 ns address set-up Functional Description The CY7C235A is a high-performance 1024-word by 8-bit

CY7C281A

Abstract: CY7C281A-25JC CY7C281A-30PC
Contextual Info: CY7C281A 1K x 8 PROM Features packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. • CMOS for optimum speed/power

CY7C281A

Abstract: CY7C281A-25JC CY7C281A-30PC
Contextual Info: CY7C281A 1K x 8 PROM Features packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. • CMOS for optimum speed/power

1k x 8 bipolar

Abstract: 82S181 82HS181 AFN-02064A
Contextual Info: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR PROM 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 Low Power Dissipation: 0.08 mW/Bit Typically Four Chip Select Inputs for Easy Memory Expansion • Three-State Outputs ■ Hermetic 24-Pin DIP

82S181

Contextual Info: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR PROM 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 • Three-State Outputs Low Power Dissipation: 0.08 mW/Bit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for Higher Fuse Reliability/Higher

CY7C235A

Contextual Info: 1CY 7C23 5A CY7C235A 1K x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 18 ns address set-up The CY7C235A is a high-performance 1024 word by 8 bit electrically programmable read only memory packaged in a slim

7C281

Abstract: K73 Package C281A CY7C281A CY7C282A CYPRESS CY7C281 CY7C281A-45JC CY7C281A-45DMB d4590 7C281A
Contextual Info: CY7C281A CY7C282A 1K x 8 PROM D Features D D D D static discharge CMOS for optimum speed/power Ċ Ċ Ċ Ċ Functional Description High speed 25 ns commercial 30 ns (military) Low power 495 mW (commercial) 660 mW (military) EPROM technology 100% programmable

1K PROM

Abstract: 3628A-1 3628A-3 3628A-4
Contextual Info: 3628A 8K 1K X 8 BIPOLAR PROM 3628A-1 50 ns Max. 3628A-3 70 ns Max. 3628A-4 90 ns Max. • Fast Access Time: 50 ns for 3628A-1 ■ Three-State Outputs ■ Low Power Dissipation: 0.08 mW/Bit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for

3628A-1

Abstract: 3628A-3 3628A-4 1k x 8 bipolar
Contextual Info: 3628A 8K 1K X 8 BIPOLAR PROM 3628A-1 50 ns Max. 3628A-3 70 ns Max. 3628A-4 90 ns Max. • Fast Access Time: 50 ns for 3628A-1 ■ Three-State Outputs N ■ Low Power Dissipation: 0.08 mW/Bit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for

CY7C281A-45JC

Contextual Info: 82A CY7C281A CY7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

CY7C235A

Contextual Info: CY7C235A 1K x 8 Registered PROM D Features D D D D metic DIP or 28Ćpin LCC and PLCC CMOS for optimum speed/power D High speed Ċ Ċ Ċ Ċ 12 ns clock to output Low power TTL Ćcompatible I/O Direct replacement for bipolar PROMs D 495 mW commercial Capable of withstanding greater than

CY7C281A

Abstract: CY7C282A CERPACK K73 CY7C281A-45JC
Contextual Info: 1CY 7C28 2A CY7C281A CY7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Contextual Info: 1K x SN74ACT2151, SN74ACT2153 11 CACHE ADDRESS COMPARATORS _ D 3105, SEPTEM BER 19 8 7 -R E V iS E D MARCH 1990 Fast Address to Match Delay . . . 22 ns Max N PACKAGE TOP VIEW On-Chip Address/Data Comparator u R ESET [ 1 A4 [ A3 [ A2 [ A1 [ AO [ DO [

tu 20 c synergy

Abstract: 4096 bit RAM nec 10474 SY10474 SY10474-5DCF SY10474-5DCS SY10474-5FCF
Contextual Info: * SY10474-5 SY10474-7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR PRELIMINARY •DESCRIPTION ■ FEATURES" Address access time, U a : 5/7 ns max. Chip select access time, Uc: 3/5 ns max. Write pulse width, tww: 5/8 ns min. Choice of two edge rates, 800/1500 ps typ.

CY7C281A

Abstract: CY7C281A-25JC CY7C281A-25PC CY7C281A-30JC CY7C281A-30PC
Contextual Info: 1CY7C282A CY7C281A 1K x 8 PROM Features • CMOS for optimum speed/power • High speed — 25 ns Commercial • Low power — 495 mW (Commercial) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP or 28-pin LCC • 5V ±10% VCC, commercial and military

Contextual Info: 82A CY7C281A 1K x 8 PROM Features • CMOS for optimum speed/power • High speed — 25 ns Commercial • Low power — 495 mW (Commercial) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP or 28-pin LCC • 5V ±10% VCC, commercial and military

Contextual Info: H M -7680RP/81RP H A R R IS SEM ICO N D U CTO R P R O D U C T S DIVISION POW ER D O W N 1K x 8 P R O M A DIVISION OF H A RRIS CORPORATION H M - 7 6 8 0 R P - Open Collector Outputs H M -7 6 8 1 R P - "Three S tate" Outputs Preliminary Pinouts Features •