600MILWIDE Search Results

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

CY7C185A-20LMB

Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Contextual Info: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A CY7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -

7c251

Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Contextual Info: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed

Contextual Info: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­

Contextual Info: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex­

Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit CMOS EEPROM DPE512S8N DESCRIPTION: The DPE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate

64150J

Contextual Info: CY27C64 ïj CYPRESS 8K x 8 EPROM Features • TTL-corapatible I/O • CMOS for optimum speed/power Functional Description • Windowed for reprogrammability • High speed — 70 ns commercial • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

QP7C261-25LI

Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Contextual Info: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed

Contextual Info: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

signetics 82s100

Abstract: 82S100 82S101 82S100/BXA Fuse-Programmable controllers Programmable Logic Array PBPT 40DIP6
Contextual Info: Signetics 8 2 S 1 0 0 /8 2 S 1 0 1 Field Programmable Logic Array 16x48x8 Military Customer Specific Products DESCRIPTION The 82S100 (3-State) and 82S101 (OpenCollector) are bipolar, Fuse Program­ mable Logic Arrays (FPLAs). Each device utilizes the standard AND/OR invert archi­

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address

Contextual Info: PA C 8 Megabit High Speed CM OS SRAM M i € R Ù S Y 'S-1 E M S DPS1MX8MKN3 DESCRIPTION: The DPS1.MX8MKN3 High Speed SRAM "STACK" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCQ mounted on a co-fired

SCN2681AC1A44

Abstract: SCN2681A pin configuration 74LS04 SCN2681 SCN2681AC1N24 SCN2681AC1N28 SCN2681AC1N40 SCN2681AE1A44 SCN2681AE1N24 SCN2681AE1N28
Contextual Info: INTEGRATED CIRCUITS SCN2681 Dual asynchronous receiver/transmitter DUART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook Philips Semiconductors 1998 Sep 04 Philips Semiconductors Product specification Dual asynchronous receiver/transmitter (DUART)

Contextual Info: FTE512S8N 4 Megabit CMOS EEPROM DESCRIPTION: The FTE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate

27c256-15

Abstract: 27C256-20
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256

Contextual Info: D PS5 1 2 S8 P 512KX8 CMOS SRAM MODULE DESCRIPTION: T h e D P S 512 S 8P is a 5 1 2K X 8 high-density, low-power static RAM module comprised of four 12 8 K X 8 m o no lithic S R A M 's, an advanced high-speed C M O S d e co d er and deco up ling capacitors surface mounted on a co-fired ceramic

Contextual Info: DPS256S8AN Dense-Pac Microsystems, Inc. O HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic

Contextual Info: D EN SE-PA C 8 Megabit CMOS SRAM M I C R O S Y S T E M S DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a IM eg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's,an advanced high-speed CMOS decoder and decouplingcapacitors surface mounted on

Contextual Info: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

Contextual Info: PLUS405 Signetics Field-Programmable Logic Sequencer 16 x 64 x 8 Military Application Specific Products Signetics Programmable Logic Product Specification • Series 28 PIN CONFIGURATION DESCRIPTION FEATURES The PLUS405 device is a bipolar programmable state machine ol the Mealy

Contextual Info: Product specification Philips Semiconductors Programmable Logic Devices Programmable logic sequencer 16x48x8 PLUS105-45 DESCRIPTION FEATURES The PLUS105-45 is a bipolar programmable state machine of the Mealy type. Both the AND and the OR array are userprogrammable. All 48 AND gates are