1M X 8 CMOS RAM Search Results

SP612B-7

Contextual Info: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns

Contextual Info: ML IS »93 SM481000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 481000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP package. • • The module utilizes two CMOS 1M x 4 dynamic RAMs

Contextual Info: SMS481000SLP 1MByte 1M x 8 CMOS DRAM Module {Low Profile) General Description Features The SMS481000SLP is a high performance, 1-megabyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP(smgle-m-line pins) package. The module utilizes eight CMOS 1M x 1 dynamic RAMs

Contextual Info: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns

Contextual Info: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (M AX.): 6 0 /8 0 /1 0 0 ns

Contextual Info: JW. i 6 1993 SM581000A 1MByte 1M x 8 CMOS DRAM Module General Description The SM 581000A is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 8 bits, in a 30-pin, leadless, single-in-line memory module (SIM M ) package. The module utilizes two CMOS 1M x 4 dynamic RAMs

Contextual Info: Order this document by MC16S084M3C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 16S 084 M 3 C 2 x 1M x 8 2 x 1M x 8 Synchronous Dynamic RAM The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with

lh511000

Abstract: W5110
Contextual Info: PRELIMINARY LH 5 1 1 0 0 0 CMOS 1M 128K x 8 Static RAM DESCRIPTION FEATURES The LH511000 is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • 131,072 • Access times: 100/120 ns (MAX.) •

Contextual Info: Order this document by MC16S084M3C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC16S084M3C 2 x 1M x 8 2 x 1M x 8 Synchronous Dynamic RAM The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with LVTTL interface. Fully synchronous operations are referenced to the

motorola dram

Abstract: BA QB MC16S084M3C BA 656
Contextual Info: MOTOROLA Order this document by MC16S084M3C/D SEMICONDUCTOR TECHNICAL DATA 2 x 1M x 8 Synchronous Dynamic RAM MC16S084M3C 2 x 1M x 8 The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with LVTTL interface. Fully synchronous operations are referenced to the

Contextual Info: 1M x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4104 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The IDT7MP4104 is a 1M x 32 static RAM module con­ structed on an epoxy laminate FR-4 substrate using 8 1M x

lh51100

Abstract: lh511000
Contextual Info: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:

Contextual Info: MEMORY CMOS 2 x 1M x 8 BITS SYNCHRONOUS DYNAMIC RAM MB81117822E-125/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS x 8 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B81117822E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: 4 % tç g r GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000S-60/70/80/10 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of eight 1M bit DRAM GM71C1000SJ in 20/26 pin

TAE 1102

Contextual Info: PRELIMINARY IDT7MP4104 1M x 32 CMOS STATIC RAM MODULE Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The ID T7M P 4104 is a 1M x 32 static RAM module con­ structed on an epoxy laminate FR -4 substrate using 8 1M x

Contextual Info: - !'l i C- !9Sú SM581000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 581000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIM M package. • • • The m odule utilizes two CM OS 1M x 4 dynamic RAMs

TAC 2J

Contextual Info: GMM7361000BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 7361000BS/SG is a 1M x 36 bits Dynamic RAM MODULI: which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x lbit DRAMs

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin

00-KX02

Contextual Info: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Features The GMM781000CNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, 1M x4 sealed in 20 pin SOJ package. The

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

AN1064

Abstract: CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 110 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 20 mA The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is

14553

Abstract: EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
Contextual Info: EDI8F81026C 1Mb x 8 Static RAM CMOS Module FEATURES DESCRIPTION • 1M x 8 bit CMOS Static RAM The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 20 thru 35ns

Contextual Info: GMM7361100BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7361100BS/SG is a 1M x 36 bits Dynamic RAM M ODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs