1M110Z Search Results

Contextual Info: MOTOROLA SC DIODES/OPTO 3TE T> S3 b3b7ESS 0GÖ3ÖS2 5 E3M0T7 MZP4728A thru MZP4764A, 1M110ZS5 thru 1M200ZS5 E L E C T R IC A L C H A R A C T E R IS T IC S Nominal Zener Voltage (T a = 25°C unless otherwise noted) Vp = 1.5 V Max, lF = 200 mA for all types

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
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EATON CM20A

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1N4740A

Contextual Info: 1N4740A - 1M200Z CREAT BY ART Pb RoHS 1.0 Watt Glass Passivated Junction Silicon Zener Diodes DO-41 COMPLIANCE Features — Low profile package — Built-in strain relief — Glass passivated junction — Low inductance — Typical IR less than 5uA above 11V —

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Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

zener 1n4740A

Abstract: 1M200Z 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A zener single green band glass ZENER SINGLE COLOR CODE E10 Zener
Contextual Info: m 1N4740A - 1 M200Z TAIWAN SEMICONDUCTOR . Pb 1.0 Watts Glass Passivated Junction Silicon Zener Diode RoHS COMPLIANCE DO-41 -MSB- Features :<sro D IA . •w~ Low profile package Built-in strain relief Glass passivated junction

Contextual Info: 1N4740A - 1M200Z CREAT BY ART 1.0 Watt Glass Passivated Junction Silicon Zener Diodes DO-41 Features — Low profile package — Built-in strain relief — Glass passivated junction — Low inductance — Typical IR less than 5uA above 11V — High temperature soldering guaranteed:

Contextual Info: 1N4740A thru 1M200Z Taiwan Semiconductor CREAT BY ART Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical IR less than 5 A above 11V - Compliant to RoHS Directive 2011/65/EU and

mzd15

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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes 1–3 WATT DO-41 SURMETIC 30 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes 1 TO 3 WATT ZENER REGULATOR

MLED96

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5 volts ZENER DIODE

Abstract: zener diode 1 watt DO-41 1M150Z DO41 1 watt zener diode 1M200Z 1N4741A 1N4742A 1N4743A
Contextual Info: DATA SHEET 1N4741A~1M200Z GLASS PASSIVATED JUNCTION SILICON ZENER DIODE Unit: inch mm VOLTAGE- 11 to 200 Volts Power - 1.0 Watts DO-41 FEATURES .034 ( .86 ) .028 ( .71 ) • Built-in strain relief • Low inductance • Typical IR less than 5.0µA above 11V

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Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

Contextual Info: MOTORCLA SC DIODE S/ OP TO 14E D § k3L72SS o o flo c n a s I _ Order this dita sheet by MPZ4728/D MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA Designer's Data Sheet 1.0 W att S u rm e tic 30 S ilic o n Zener D io d e s . . a complete series of 1,0 watt zener diodes with limits and operating characteristics

Contextual Info: 1N4741A THRU 1M200Z Glass Passivated Junction Silicon Zener Diode Voltage Range 11 to 200 Volts 1.0 Watts Peak Power DO-41 Features a a a a a a a Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V

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Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

TSP160C

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Contextual Info: 1N4740A - 1M200Z CREAT BY ART Pb RoHS 1.0 Watt Glass Passivated Junction Silicon Zener Diodes DO-41 COMPLIANCE Features — Low profile package — Built-in strain relief — Glass passivated junction — Low inductance — Typical IR less than 5uA above 11V —

MOTOROLA POWER TRANSISTOR

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Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

1M200Z

Abstract: 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1n4742a 12v
Contextual Info: 1N4741A THRU 1M200Z GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Typical IR less than 5.0 £gA above 11V l High temperature soldering :

ZENER DIODE 2.7V 1W

Abstract: 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4741A-1M200Z
Contextual Info: 1N4741A-1M200Z Glass-Passivated Junction Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power DO-41 FEATURES Low profile package Built-in strain relief Glass-passivated juction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed:

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Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete