BC517 Search Results

BC517 data sheet

Abstract: transistor BC517 BC517
Contextual Info: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage

bc517

Abstract: StR 40000 or transistor transistor BC517
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA

Contextual Info: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C

BC517

Abstract: BC517 data sheet
Contextual Info: BC517 NPN Silicon Darlington Transistor COLLECTOR 1 BASE 2 EMITTER 3 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCB 40 V Emitter Base Voltage VEB

bc517

Abstract: Transistor B C 458 c 458 c transistor transistor c 458 Transistor bc517
Contextual Info: BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted

transistor BC517

Abstract: bc517 BC516 npn darlington SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 2003 Oct 16 2004 Nov 05 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA

ph-13 transistor

Abstract: BC517
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

BC517

Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

bc517

Abstract: BC517 data sheet
Contextual Info: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25ᴱ RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V V Collector Current IC 500 mA

Contextual Info: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation

019G

Abstract: BC517 data sheet BC517
Contextual Info: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 e m itte r • V ery high DC current gain (min. 3 0000). 2 base 3 co lle cto r APPLICATIONS

BC517 data sheet

Abstract: BC517
Contextual Info: BC517 NPN Silicon Darlington Transistor COLLECTOR 1 BASE 2 EMITTER 3 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCB 40 V Emitter Base Voltage VEB

bc517

Abstract: BC517S
Contextual Info: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous

Contextual Info: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter

Contextual Info: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base

bc517

Abstract: BC517 data sheet transistor BC517
Contextual Info: SEMICONDUCTOR BC517 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC517 2. Marking 3 4 No. 1998. 6. 23 Item Marking Description Device Name BC517 BC517 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.

bc517

Abstract: str 6707 datasheet BC517 data sheet npn darlington StR 40000 BC516 BP317 James
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor

Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

BC516

Abstract: BC517 HFE-30
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A

TRANSISTOR BC 157

Abstract: BC517G bc517 BC517RL1G BC517ZL1G BC517 model file
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage

BC517

Abstract: BC516 bc516 micro electronics bc 517
Contextual Info: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence

Contextual Info: BC517 MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e Value CASE 29-04, STYLE 17 TO-92 TO-226AA Unit VCES 30 V dc C o lle c to r-B a s e V o lta g e VCB 40 Vdc E m itte r-B a s e V o lta g e Veb 10 V dc C cH e cto r C u rre n t — C o n tin u o u s