1MH7 Search Results

ux 30 diode

Abstract: SS4K 25cO
Contextual Info: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE D IM EN SIO N S DE10PC3 V J k ? - UX 7 1 *y K P # # / Standard soldering pad 30 V 10 A : ±o.i Tolerance: ±0.1 •S M D • f f i V F= 0 .4 V •im-xmzamm a • D C tti^ O R ffl •D C /D C □ yj {— $>

d10sc4m

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D10SC4M 40 V 10 A >Tjl50°C Prrsm 77 >7,llÆ-,lbK V 'J i ffill >SRS;H >DC/DC m m s t f - h s o A H tg I j S f e s Ttv— RATINGS Absolute Maximum Ratings a Item a E -f- iXlYrii.HX

Contextual Info: æ HCTS7266MS HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input Exclusive NOR Gate August 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si)

Contextual Info: 8 8 0 2 _ L i m _ TECHNOLOGY LTC1293/LTC1294/LTC1296 Single Chip 12-Bit D ata Acquisition System KOTURCS D C S C R IP T IO II • S o ft w a re P ro g r a m m a b l e Features T h e L T C 1 293/4/6 is a fam il y of data acquisition s y s te m s

A720 transistor

Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Contextual Info: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.

Contextual Info: 2 /a v h + - K U 7 S W - I * y j y a Schottky Barrier Diode Twin Diode O U T LIN E D IM E N S IO N S S20SC9M Unit •mm Package I MTO-3P -, 4>33±02 ' 90V 20A ^+0.5 - 0. 1 1 5 .0 ±0-3 2.2± a5> \ Date code \ Type No. •T jl5 0 °C I7 • P rrsm • ffiiE

on semiconductor 50-5G

Abstract: F-560 FRF501G FRF507G ru 94v0
Contextual Info: % TAIWAN SEMICONDUCTOR FRF501G - FRF507G Isolated 5.0 AMPS. Glass Passivated Fast Recovery Rectifiers tò RoHS COMPLIANCE 1IQ-22QAB Mr* •I rw: .io:i£?s; fi«:< w i? I .vi3|:.i; • Features <>■ ❖ <r G la 5 5 p a s s iv a te d c h ip j un cti o n .

Contextual Info: ANALOG DEVICES Complete 12-B it 10 MSPS Monolithic A/D Converter AD872A FUNCTIONAL BLOCK DIAGRAM FEATURES Monolithic 12-Bit 10 MSPS A/D Converter Low Noise: 0.26 LSB RMS Referred-to-lnput No Missing Codes Guaranteed Differential Nonlinearity Error: 0.5 LSB

ush50

Contextual Info: USH5010 HIGH VOLTAGE Universal Sem iconductor a?ogn s w itc h GENERAL DESCRIPTION FEATURES Full Dielectric Isolation for High Reliability 45 dB typical Output O ff Isolation at 10 Mhz Typical on resistance, Ron, is 28 ohms Excellent Noise Immunity & Extremely Low Isoi

u101b

Abstract: G182AA
Contextual Info: Temic DG180/181/182 S e m i c o n d u c t o r s High-Speed Drivers with Dual SPST JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • •

SRAF520

Abstract: sb 5150 ITO-22QAC
Contextual Info: E SRAF520 • SRAF5150 TAIWAN SEM ICONDUCTO R RoHS C OM PLIANCE Isolated 5.0 AMPS. Schottky Barrier Rectifiers ITQ-220AC 1 .»00:10.01 -y & p x r •r.> '< 4 l J . « F A •1515 : > w .nn'J.w: ' u-'uv'y. Features ❖ ❖ ■fr <5* ❖ .10512001 _ r M r.

IC ST 201A

Contextual Info: Quad SPST CMOS Analog Sw itches ♦ Improved 2nd Source! See pages 3 and 5 for "MAXIM Advantage ” + Guaranteed ±4.5V to ±18V Operation A ll th r e e d e v ic e s h a v e g u a ra n te e d b r e a k - b e fo r e m a ke s w itc h in g . T h e M AX331 a n d D G 2 0 1 A d iffe r

L-53F3BT

Contextual Info: K lligbnght IN FR AR ED EMITTING DIODES L-34F3C L-53F3BT c I T-1 3mm INFRARED EMITTING DIODES ELECTRO-OPTICAL CHARACTERISTIC TA=25°C L-34F3C I L-34SF4C W A T E R C LE A R L E N S L-34F3BT/ L-34SF4BT BLUE T R A N S P A R E N T L E N S Item Symbol Radiant Intensity

LD 7523 GS

Abstract: transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS
Contextual Info: 3DE » • 7 ^ 2 3 7 DQ3072Ö T SCS-THOMSON ¡ H ü « ! 1 R F K 4 H 1 5 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TY P E IR FK4H 150 . . ■ ■ V dss RDS on Id 100 V 0.014 £2 145 A HIGH CURRENT POWER MODULE VERY LOW Rth JUNCTION TO CASE

10MHz ultrasound pulser

Abstract: USH5010 USH5010-AIC24 5SWOA
Contextual Info: USH5010 HIGH VO LTAG E Universal Semiconductor FEATURES channelSWITCH ANALOG GENERAL DESCRIPTION Full D ielectric Isolation fo r High Reliability 4 5 dB ty p ica l O u tp u t O ff Isolation at 10 Mhz T ypical on resistance, R o n , is 2 8 ohms E xcellent Noise Im m u n ity & Extrem ely Low I s o l

Contextual Info: HS-0506RH, HS-0507RH HARRIS S E M I C O N D U C T O R Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexer August 1995 Features Description • Low On Resistance 400D Max These radiation hardened monolithic CMOS multiplexers each include an array of sixteen analog switches, a digital

1124B

Abstract: 27HC256
Contextual Info: 27HC256 M icro ch ip 256K 32K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (ultraviolet light) Erasable (electrically) Pro­ grammable Read Only Memory. The device is organ­ ized into 32K words of 8 bit each. Advanced CMOS

CP1202

Contextual Info: 27HC256 M ic ro c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS • High speed performance — 55ns access time available 256K bit (electrically) Programmable Read Only Memory. CMOS technology for low power consumption

14D241

Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
Contextual Info: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61

MAX368cpn

Contextual Info: 19-0982; Rev 1; 7/96 V M ^ X I V M Fa u lt-P ro tected Analog M ultiplexer w ith L a tc h Maxim’s MAX368/369 are 8 channel single-ended 1 of 8 and 4 channel differential (2 of 8) fault-protected multiplexers with on-chip data latches. Using a series N-channel, P-channel, N-channel structure, these multi­

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC3ML Package I MTO-3P clo-o.it 4>33±0-2 n ^ b a ö # W D ate code 30V 60A Unit • mm ^+0.5 5.0±0-3 2.2 ± 0 -5 ’ V aa%j T y p e N o. \ ~| 2.0 ±0-3 •T jl5 0 °C 2.4±0-3 • 1 £ V f = 0.48 V

SRS1620

Abstract: WT MARKING CODE marking code SKs MARKING wrj
Contextual Info: E TAIWAN SEMICONDUCTOR SRS1620 - SRS16100 16.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK tò RoHS COM PLIANCE _x Features ^ $ $ ❖ I 01011.14: —t- ok:i .^: o*sii.U! 1 For surface mounted application Low for,va rd vol tage d ro p Hig h current capabil ity

0026342

Abstract: GBJ25005 GBJ2510
Contextual Info: GBJ25005 - GBJ2510 25A GLASS PASSIVATED BRIDGE RECTIFIER /LI T E M I 17I / POWERSEMICONDUCTOR Features Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 350A Peak Ideal for Printed Circuit Board Applications

Contextual Info: S t- A ^CAPACITORS M etallized Polypropylene Capacitors W rap A n d Fill Case O rs iq n c c J • Flame Retardant Encapsulation • Rated For 20 kHz And Up Lead Material: Solder coated or tinned solid copper wire or lug. Lead Strength: • High Current—Up To